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最近实验表明纳米尺度MOSFET中的过剩噪声主要为散粒噪声,而此前研究认为MOSFET中不存在散粒噪声,短沟道MOSFET中的过剩噪声为热噪声. 本文基于器件电流模型分析散粒噪声取代热噪声成为过剩噪声主要成分的转变条件,根据该条件对纳米尺度MOSFET噪声特性的预测与文献报道的实验现象、模拟结果以及介观散粒噪声相关结论相符合.
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关键词:
- 散粒噪声 /
- 过剩噪声 /
- 纳米尺度MOSFET
Recent experiment indicates that shot noise is the dominant excess noise in nanoscale MOSFET. However the early research reported that no shot noise was observed in MOSFET, and thermal noise was the excess noise in short channel MOSFET. Based on the device current model, we derive the conversion conditions for the dominant component of excess noise shifting from thermal noise to shot noise. According to the conversion conditions, the prediction of the noise performance of nanoscale MOSFET is given, and the results coincide with experimental phenomena, simulation data and conclusion of mesoscopic shot noise, which has been reported in the article.-
Keywords:
- shot noise /
- excess noise /
- nanoscale MOSFET
[1] Jeon J, Lee J, Kim J, Park C H, Lee H, Oh H, Kang H K, Park B G, Shin H 2009 Symposium on VLSI Technology, 2009. Honolulu,June 16—18, 2009 48
[2] Klein P 1999 IEEE Electron Dev. Lett. 20 399
[3] Knoblinger G, Klein P, Tiebout M 2001 IEEE J. Solid-State Circuits 36 831
[4] Chen C, Deen M 2002 IEEE Trans. Electr. Dev. 49 1484
[5] Han K, Shin H, Lee K 2004 IEEE Trans. Electr. Dev. 51 261
[6] Roy A, Enz C 2005 IEEE Trans. Electr. Dev. 52 611
[7] Mahajan V M, Jindal R P, Shichijo H, Martin S, Fan-Chi H, Trombley D 2009 2nd International Workshop on Electron Devices and Semiconductor Technology, 2009. IEDST '09. Mumbai, June 1—2, 2009, 1
[8] Navid R, Jungemann C, Lee T, Dutton R 2007 J. Appl. Phys. 101 124501
[9] Navid R, Dutton R W 2002 International Conference on Simulation of Semiconductor Processes and Devices 2002, 75
[10] An X T, Li Y X, Liu J J 2007 Acta Phy. Sin. 56 4105 (in Chinese) [安兴涛、 李玉现、 刘建军 2007 56 4105]
[11] Bulashenko O, Rubí J 2001 Phys. Rev. B 64 45307
[12] Gomila G, Cantalapiedra I, González T, Reggiani L 2002 Phys. Rev. B 66 75302
[13] Schomerus H, Mishchenko E, Beenakker C 1999 Phys. Rev. B 60 5839
[14] González T, Mateos J, Pardo D, Reggiani L, Bulashenko O 1999 Physica B: Physics of Condensed Matter 272 282
[15] Naveh Y, Averin D, Likharev K 1998 Phys. Rev. B 58 15371
[16] González T, Mateos J, Pardo D, Bulashenko O, Reggiani L 1999 Phys. Rev. B 60 2670
[17] Beenakker C 1999 Phys. Rev. Lett. 82 2761
[18] Martin J S, Bournel A, Dollfus P 2004 IEEE Trans. Electr. Dev. 51 1148
[19] Sano N, Natori K, Mukai M, Matsuzawa K 1998 Extended Abstracts of 1998 Sixth International Workshop on Computational Electronics, 1998. IWCE-6. Osaka, Oct 19—21, 1998, 112
[20] Lundstrom M 1997 IEEE Electron Dev. Lett. 18 361
[21] Rahman A, Lundstrom M 2002 IEEE Trans. Electr. Dev. 49 481
[22] Lau W, Yang P, Ho V, Toh L, Liu Y, Siah S, Chan L 2008 Microelectron. Reliab 48 1641
[23] Rahman A, Guo J, Datta S, Lundstrom M 2003 IEEE Trans. Electr. Dev. 50 1853
[24] Betti A, Fiori G, Iannaccone G 2010 Phys. Rev. B 81 035329
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[1] Jeon J, Lee J, Kim J, Park C H, Lee H, Oh H, Kang H K, Park B G, Shin H 2009 Symposium on VLSI Technology, 2009. Honolulu,June 16—18, 2009 48
[2] Klein P 1999 IEEE Electron Dev. Lett. 20 399
[3] Knoblinger G, Klein P, Tiebout M 2001 IEEE J. Solid-State Circuits 36 831
[4] Chen C, Deen M 2002 IEEE Trans. Electr. Dev. 49 1484
[5] Han K, Shin H, Lee K 2004 IEEE Trans. Electr. Dev. 51 261
[6] Roy A, Enz C 2005 IEEE Trans. Electr. Dev. 52 611
[7] Mahajan V M, Jindal R P, Shichijo H, Martin S, Fan-Chi H, Trombley D 2009 2nd International Workshop on Electron Devices and Semiconductor Technology, 2009. IEDST '09. Mumbai, June 1—2, 2009, 1
[8] Navid R, Jungemann C, Lee T, Dutton R 2007 J. Appl. Phys. 101 124501
[9] Navid R, Dutton R W 2002 International Conference on Simulation of Semiconductor Processes and Devices 2002, 75
[10] An X T, Li Y X, Liu J J 2007 Acta Phy. Sin. 56 4105 (in Chinese) [安兴涛、 李玉现、 刘建军 2007 56 4105]
[11] Bulashenko O, Rubí J 2001 Phys. Rev. B 64 45307
[12] Gomila G, Cantalapiedra I, González T, Reggiani L 2002 Phys. Rev. B 66 75302
[13] Schomerus H, Mishchenko E, Beenakker C 1999 Phys. Rev. B 60 5839
[14] González T, Mateos J, Pardo D, Reggiani L, Bulashenko O 1999 Physica B: Physics of Condensed Matter 272 282
[15] Naveh Y, Averin D, Likharev K 1998 Phys. Rev. B 58 15371
[16] González T, Mateos J, Pardo D, Bulashenko O, Reggiani L 1999 Phys. Rev. B 60 2670
[17] Beenakker C 1999 Phys. Rev. Lett. 82 2761
[18] Martin J S, Bournel A, Dollfus P 2004 IEEE Trans. Electr. Dev. 51 1148
[19] Sano N, Natori K, Mukai M, Matsuzawa K 1998 Extended Abstracts of 1998 Sixth International Workshop on Computational Electronics, 1998. IWCE-6. Osaka, Oct 19—21, 1998, 112
[20] Lundstrom M 1997 IEEE Electron Dev. Lett. 18 361
[21] Rahman A, Lundstrom M 2002 IEEE Trans. Electr. Dev. 49 481
[22] Lau W, Yang P, Ho V, Toh L, Liu Y, Siah S, Chan L 2008 Microelectron. Reliab 48 1641
[23] Rahman A, Guo J, Datta S, Lundstrom M 2003 IEEE Trans. Electr. Dev. 50 1853
[24] Betti A, Fiori G, Iannaccone G 2010 Phys. Rev. B 81 035329
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