-
Based on a tight-binding approximation and transfer matrix method, we investigated the effects of the composition of nucleotide base pairs, on-site energies of the electrode and DNA-metal coupling strength on the current-voltage characteristic. The results indicate that the saturation current of DNA molecule which is composed of one single kind of nucleotide base pair is much higher than that composed of two kinds of nucleotide base pair. Meanwhile, the DNA molecule which is rich in G-C base pairs has higher electronic transport ability. When the bias is low, the on-site energies of the electrode have the effect of impeding charge injection. On the other hand, when the bias is high, the on-site energies of the electrode have the effect of enhancing charge injection. In addition, we can find that a stronger DNA-metal coupling does not always result in a larger saturation current. When tdm=td, there is a resonance injection, which is optimized for electron transport. When tdm departs from td, the resonance injection is reduced, which lead to the stronger of DNA-metal coupling at the range of tdm>td and the lower of saturation current of DNA.
-
Keywords:
- DNA molecule /
- current-voltage characteristic /
- base pairs composition /
- on-site energies of the electrode
[1] Joachim C, Gimzewski J K, Aviram A 2000 Nature 408 541
[2] Weiss P S, Bumm L A, Dunbar T D, Burgin T P, Tour J M, Allara D L 1998 Molecular Electronics: Science and Technology (New York: New York Academy of Sciences) p14
[3] Chen J, Wang W, Klemic J, Reed M A, Axelrod B W, Kaschak D M 2002 Molecular Electronics Ⅱ(New York: New York Academy of Sciences) p69
[4] Deng X Q, Zhang Z H 2010 Acta Phys. Sin. 59 2714 (in Chinese) [邓小青、张振华 2010 59 2714]
[5] Chen L N, Ma S S, Ouyang F P, Wu X Z, Xiao J, Xu H 2010 Chin. Phys. B 19 097301
[6] Li Z L, Li H Z, Ma Y, Zhang G P, Wang C K 2010 Chin. Phys. B 19 067305
[7] Huo X X, Wang C,Zhang X M, Wang L G 2010 Acta Phys. Sin. 59 4955 (in Chinese) [霍新霞、王 畅、张秀梅、王利光 2010 59 4955]
[8] Mauro D E, Hollenberg C P 1993 Adv. Mat. 5 384
[9] Niemeyer C M 2001 Angew. Chem. Int. Ed. 40 4128
[10] Bean L T, Yan H, Kopatsch J, Liu F, Winfree E, Reif J H, Seeman N C 2000 J. Am. Chem. Soc. 122 1848
[11] Seeman N C 2001 Nano Lett. 1 22
[12] Braun E, Eichen Y, Sivan U, Ben-Yoseph G 1998 Nature 391 775
[13] Zhang Y, Austin R H, Kraeft J, Cox E C, Ong N P 2002 Phys. Rev. Lett. 89 198102
[14] de Pablo P J, Moreno-Herrero F, Colchero J 2000 Phys. Rev. Lett. 85 4992
[15] Porath D, Bezryadin A, de Vries S, Dekker C 2000 Nature 403 635
[16] Li K, Dong R X, Ban G, Han H W, Su W, Yan X L 2009 Acta Phys. Sin. 58 6477 (in Chinese) [李 珂、董瑞新、班 戈、韩洪文、苏 伟、闫循领 2009 58 6477]
[17] Fink H W, Schonenberger C 1999 Nature 398 407
[18] Kasumov A Y, Kociak M, Gueron S, Reulet B, Volkov V T, Klinov D V, Bouchiat H 2001 Science 291 280
[19] Myeong H L, Sankey O F 2009 Phys. Rev. E 79 051911
[20] Mallajosyula S S, Lin J C, Cox D L, Pati S K, Singh R R P 2008 Phys. Rev. Lett. 101 176805
[21] Liu T, Wang Y, Wang K L 2007 Chin. Phys. 16 272
[22] Guo A M, Xiong S J, Yang Z, Zhu H J 2008 Phys. Rev. E 78 061922
[23] Benjanim B, Schmidt, Matthias H H, Gerd S 2007 Phys. Rev. B 75 115125
[24] Meng X L, Gao X T, Qu Z, Kang D W, Liu D S, Xie S J 2008 Acta Phys. Sin. 57 5316 (in Chinese) [孟宪兰、高绪团、渠 朕、康大伟、刘德胜、解士杰 2008 57 5316]
[25] Ma S S, Xu H, Wang H Y, Guo R 2009 Chin. Phys. B 18 3591
[26] Malyshev A V 2007 Phys. Rev. Lett. 98 096801
[27] Stephan R 2003 Phys. Rev. Lett. 91 108101
[28] Gianaurelio C, Luis C, Danny P, Dekker C 2002 Phys. Rev. B 65 241314
-
[1] Joachim C, Gimzewski J K, Aviram A 2000 Nature 408 541
[2] Weiss P S, Bumm L A, Dunbar T D, Burgin T P, Tour J M, Allara D L 1998 Molecular Electronics: Science and Technology (New York: New York Academy of Sciences) p14
[3] Chen J, Wang W, Klemic J, Reed M A, Axelrod B W, Kaschak D M 2002 Molecular Electronics Ⅱ(New York: New York Academy of Sciences) p69
[4] Deng X Q, Zhang Z H 2010 Acta Phys. Sin. 59 2714 (in Chinese) [邓小青、张振华 2010 59 2714]
[5] Chen L N, Ma S S, Ouyang F P, Wu X Z, Xiao J, Xu H 2010 Chin. Phys. B 19 097301
[6] Li Z L, Li H Z, Ma Y, Zhang G P, Wang C K 2010 Chin. Phys. B 19 067305
[7] Huo X X, Wang C,Zhang X M, Wang L G 2010 Acta Phys. Sin. 59 4955 (in Chinese) [霍新霞、王 畅、张秀梅、王利光 2010 59 4955]
[8] Mauro D E, Hollenberg C P 1993 Adv. Mat. 5 384
[9] Niemeyer C M 2001 Angew. Chem. Int. Ed. 40 4128
[10] Bean L T, Yan H, Kopatsch J, Liu F, Winfree E, Reif J H, Seeman N C 2000 J. Am. Chem. Soc. 122 1848
[11] Seeman N C 2001 Nano Lett. 1 22
[12] Braun E, Eichen Y, Sivan U, Ben-Yoseph G 1998 Nature 391 775
[13] Zhang Y, Austin R H, Kraeft J, Cox E C, Ong N P 2002 Phys. Rev. Lett. 89 198102
[14] de Pablo P J, Moreno-Herrero F, Colchero J 2000 Phys. Rev. Lett. 85 4992
[15] Porath D, Bezryadin A, de Vries S, Dekker C 2000 Nature 403 635
[16] Li K, Dong R X, Ban G, Han H W, Su W, Yan X L 2009 Acta Phys. Sin. 58 6477 (in Chinese) [李 珂、董瑞新、班 戈、韩洪文、苏 伟、闫循领 2009 58 6477]
[17] Fink H W, Schonenberger C 1999 Nature 398 407
[18] Kasumov A Y, Kociak M, Gueron S, Reulet B, Volkov V T, Klinov D V, Bouchiat H 2001 Science 291 280
[19] Myeong H L, Sankey O F 2009 Phys. Rev. E 79 051911
[20] Mallajosyula S S, Lin J C, Cox D L, Pati S K, Singh R R P 2008 Phys. Rev. Lett. 101 176805
[21] Liu T, Wang Y, Wang K L 2007 Chin. Phys. 16 272
[22] Guo A M, Xiong S J, Yang Z, Zhu H J 2008 Phys. Rev. E 78 061922
[23] Benjanim B, Schmidt, Matthias H H, Gerd S 2007 Phys. Rev. B 75 115125
[24] Meng X L, Gao X T, Qu Z, Kang D W, Liu D S, Xie S J 2008 Acta Phys. Sin. 57 5316 (in Chinese) [孟宪兰、高绪团、渠 朕、康大伟、刘德胜、解士杰 2008 57 5316]
[25] Ma S S, Xu H, Wang H Y, Guo R 2009 Chin. Phys. B 18 3591
[26] Malyshev A V 2007 Phys. Rev. Lett. 98 096801
[27] Stephan R 2003 Phys. Rev. Lett. 91 108101
[28] Gianaurelio C, Luis C, Danny P, Dekker C 2002 Phys. Rev. B 65 241314
计量
- 文章访问数: 8776
- PDF下载量: 703
- 被引次数: 0
下载:
