不同气氛下多孔硅中电子偶素湮没行为研究

李卓昕; 王丹妮; 王宝义; 薛德胜; 魏龙; 秦秀波

doi:10.7498/aps.59.6647

摘要

使用正电子湮没谱学方法,在不同气氛下对电化学腐蚀法制备的多孔硅中电子偶素的湮没行为进行了系统的研究.正电子湮没寿命谱测试结果表明,样品中存在长达40 ns的电子偶素湮没成分,并且进入多孔硅膜层的正电子约有80%形成电子偶素,具有非常高的电子偶素产额;在氧气气氛下,由于气体导致o-Ps发生自旋转化猝灭是使多孔硅样品中电子偶素寿命缩短的主要原因.结合正电子寿命-动量关联谱测量结果,分析了不同气氛下多孔硅样品中电子偶素湮没寿命及动量变化关系,讨论了多孔硅中电子偶素的湮没机理以及气氛对孔径计算理论模型的影响.

关键词:

Abstract

Porous silicon (PS) prepared by electrochemical etching method has been studied by positron annihilation lifetime spectroscopy (PALS) and age-momentum correlation (AMOC) measurement in different atmospheres. The longest lifetime component in PALS results is ascribed to the annihilation of positronium in cavities of PS sample. It is found that 80% of the positrons implanted in PS film have formed positronium atoms. PALS results show that the lifetime of ortho-positronium has smaller value when the sample was in oxygen gas medium compared with those in other medium. AMOC results reveal that S parameter of three lifetime components in oxygen are all bigger than that in nitrogen atmosphere. These are probably caused by the oxygen leading to the spin-conversion of positronium atoms.

Keywords:

作者及机构信息

(1)兰州大学磁学与磁性材料教育部重点实验室,兰州 730000; (2)兰州大学磁学与磁性材料教育部重点实验室,兰州 730000;中国科学院高能物理研究所,核分析技术重点实验室,北京 100049; (3)中国科学院高能物理研究所,核分析技术重点实验室,北京 100049

基金项目: 国家自然科学基金(批准号:10835006,10705031,60606011)资助的课题.

Authors and contacts

(1)Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education,Lanzhou University, Lanzhou 730000, China; (2)Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education,Lanzhou University, Lanzhou 730000, China;Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics,Chinese Academy of Sciences, Beijing 100049, China; (3)Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics,Chinese Academy of Sciences, Beijing 100049, China

参考文献

[1]	Chuang S Y, Tao S J 1971 J. Chem. Phys. 54 4902
[2]	Ito Y, Yamashina T, Nagasaka M 1975 Appl. Phys. 6 323
[3]	Ma L, Chen Z Q, Wang S J, Peng Z L, Luo X H 1997 Acta Phys. Sin. 46 2267(in Chinese)[马莉、陈志权、王少阶、彭治林、罗锡辉 1997 46 2267]
[4]	Sato K, Murakami H, Ito K, Hirata K, Kobayashi Y 2009 Mater. Sci. Forum 607 53
[5]	Kobayashi Y, Ito K, Oka T, Hirata K 2007 Radiat. Phys. Chem. 76 224
[6]	Nagashima Y, Kakimoto M, Hyodo T, Fujiwara K, Ichimura A, Chang T, Deng J, Akahane T, Chiba T, Suzuki K, McKee B T A, Stewart A T 1995 Phys. Rev. A 52 258
[7]	Eijt S W H, van Veen A, Falub C V, Escobar Galindo R, Schut H, Mijnarends P E, de Theije F K, Balkenende A R 2003 Radiat. Phys. Chem. 68 357
[8]	Yu R S, Ohdaira T, Suzuki R, Ito K, Hirata K, Sato K, Kobayashi Y, Xu J 2003b Appl. Phys. Lett. 83 4966
[9]	Jiang Z Y, Yu W Z, Huang Y J, Xia Y F, Ma S X 2006 Acta Phys. Sin. 55 3136 (in Chinese) [蒋中英、郁伟中、黄彦君、夏元复、马淑新 2006 55 3743]
[10]	Wang S J, Chen Z Q, Wang B, Wu Y C, Fang P F, Zhang Y X 2008 Applied Positron Spectroscopy (Wuhan: Science and Technology Press) p131(in Chinese) [王少阶、陈志权、王波、吴亦初、方鹏飞、张永学 2008 应用正电子谱学(武汉:湖北科学技术出版社)第130页]
[11]	Uedono A, Kawano T, Tanigawa S, Ban M, Kyoto M 1995 Nucl. Instrum. Meth. B 103 511
[12]	Suzuki N, Oonishi T, Hyodo T, Chang T 2002 Appl. Phys. A 74 791
[13]	Brandt W 1983 Positron Solid-State Physics (Amsterdam: North-Holland) p8
[14]	Stoll H, Castellaz P, Siegle A 2003 Principles and Applications of Positron&Positronium Chemistry (Singapore: World Scientific Publishing Company) p356
[15]	Kansy J 1996 Nucl. Instrum. Meth. A 374 235
[16]	Smith R L, Collins S D 1992 J. Appl. Phys. 71 8
[17]	Anto Pradeep J, Agarwal P 2008 J. Appl. Phys. 104 123515
[18]	Borghesi A, Sassella A, Pivac B, Pavesi L 1993 Solid State Commun. 87 1
[19]	Brusa R S, Deng W, Karwasz G P, Zecca A 2001 Appl. Phys. Lett. 79 1492
[20]	Dutta D, Ganguly B N, Gangopadhyay D, Mukherjee T, Dutta-Roy B 2004 J. Phys. Chem. B 108 8947
[21]	Yu W Z 2003 Positron Physics and Its Application (Bejing: Science Press) p54 (in Chinese) [郁伟中 2003 正电子物理及其应用第一版 (北京:科学出版社)第54页]
[22]	Mohamed H F M 2001 Egyptian Journal of Solids 24 41
[23]	Itoh Y, Murakami H, Kinoshita A 1996 Appl. Surf. Sci. 102 423
[24]	Castellaz P, Major J, Mujica C, Schneider H, Seeger A, Siegle A, Stoll H, Billard I 1996 J. Radioanal. Nucl. Ch. 210 457
[25]	Itoh Y, Murakami H, Kinoshita A 1994 Hyperfine Interact. 84 121
[26]	Shinohara N, Suzuki N, Chang T, Hyodo T 2001 Phys. Rev. A 64 042702
[27]	Tischler M A, Collins R T, Stathis J H, Tsang J C 1992 Appl. Phys. Lett. 60 639
[28]	Itoh Y, Murakami H, Kinoshita A 1995 Mater. Sci. Forum. 173 175
[29]	Tao S J 1972 J. Chem. Phys. 56 5499
[30]	Eldrup M, Lightbody D, Sherwood J N 1981 Chem. Phys. 63 51

施引文献

[1]	Chuang S Y, Tao S J 1971 J. Chem. Phys. 54 4902
[2]	Ito Y, Yamashina T, Nagasaka M 1975 Appl. Phys. 6 323
[3]	Ma L, Chen Z Q, Wang S J, Peng Z L, Luo X H 1997 Acta Phys. Sin. 46 2267(in Chinese)[马莉、陈志权、王少阶、彭治林、罗锡辉 1997 46 2267]
[4]	Sato K, Murakami H, Ito K, Hirata K, Kobayashi Y 2009 Mater. Sci. Forum 607 53
[5]	Kobayashi Y, Ito K, Oka T, Hirata K 2007 Radiat. Phys. Chem. 76 224
[6]	Nagashima Y, Kakimoto M, Hyodo T, Fujiwara K, Ichimura A, Chang T, Deng J, Akahane T, Chiba T, Suzuki K, McKee B T A, Stewart A T 1995 Phys. Rev. A 52 258
[7]	Eijt S W H, van Veen A, Falub C V, Escobar Galindo R, Schut H, Mijnarends P E, de Theije F K, Balkenende A R 2003 Radiat. Phys. Chem. 68 357
[8]	Yu R S, Ohdaira T, Suzuki R, Ito K, Hirata K, Sato K, Kobayashi Y, Xu J 2003b Appl. Phys. Lett. 83 4966
[9]	Jiang Z Y, Yu W Z, Huang Y J, Xia Y F, Ma S X 2006 Acta Phys. Sin. 55 3136 (in Chinese) [蒋中英、郁伟中、黄彦君、夏元复、马淑新 2006 55 3743]
[10]	Wang S J, Chen Z Q, Wang B, Wu Y C, Fang P F, Zhang Y X 2008 Applied Positron Spectroscopy (Wuhan: Science and Technology Press) p131(in Chinese) [王少阶、陈志权、王波、吴亦初、方鹏飞、张永学 2008 应用正电子谱学(武汉:湖北科学技术出版社)第130页]
[11]	Uedono A, Kawano T, Tanigawa S, Ban M, Kyoto M 1995 Nucl. Instrum. Meth. B 103 511
[12]	Suzuki N, Oonishi T, Hyodo T, Chang T 2002 Appl. Phys. A 74 791
[13]	Brandt W 1983 Positron Solid-State Physics (Amsterdam: North-Holland) p8
[14]	Stoll H, Castellaz P, Siegle A 2003 Principles and Applications of Positron&Positronium Chemistry (Singapore: World Scientific Publishing Company) p356
[15]	Kansy J 1996 Nucl. Instrum. Meth. A 374 235
[16]	Smith R L, Collins S D 1992 J. Appl. Phys. 71 8
[17]	Anto Pradeep J, Agarwal P 2008 J. Appl. Phys. 104 123515
[18]	Borghesi A, Sassella A, Pivac B, Pavesi L 1993 Solid State Commun. 87 1
[19]	Brusa R S, Deng W, Karwasz G P, Zecca A 2001 Appl. Phys. Lett. 79 1492
[20]	Dutta D, Ganguly B N, Gangopadhyay D, Mukherjee T, Dutta-Roy B 2004 J. Phys. Chem. B 108 8947
[21]	Yu W Z 2003 Positron Physics and Its Application (Bejing: Science Press) p54 (in Chinese) [郁伟中 2003 正电子物理及其应用第一版 (北京:科学出版社)第54页]
[22]	Mohamed H F M 2001 Egyptian Journal of Solids 24 41
[23]	Itoh Y, Murakami H, Kinoshita A 1996 Appl. Surf. Sci. 102 423
[24]	Castellaz P, Major J, Mujica C, Schneider H, Seeger A, Siegle A, Stoll H, Billard I 1996 J. Radioanal. Nucl. Ch. 210 457
[25]	Itoh Y, Murakami H, Kinoshita A 1994 Hyperfine Interact. 84 121
[26]	Shinohara N, Suzuki N, Chang T, Hyodo T 2001 Phys. Rev. A 64 042702
[27]	Tischler M A, Collins R T, Stathis J H, Tsang J C 1992 Appl. Phys. Lett. 60 639
[28]	Itoh Y, Murakami H, Kinoshita A 1995 Mater. Sci. Forum. 173 175
[29]	Tao S J 1972 J. Chem. Phys. 56 5499
[30]	Eldrup M, Lightbody D, Sherwood J N 1981 Chem. Phys. 63 51

[1]	李重阳, 赵宾, 张俊伟. 电子偶素在OMC/SBA-15, OMC@SBA-15及CuO@SBA-15催化剂中的化学猝灭. , 2022, 71(6): 067805. doi: 10.7498/aps.71.20211814
[2]	李重阳, 李梦德, 汪美, 李涛, 刘建党, 叶邦角, 陈志权. ZIFs纳米晶体中电子偶素的自旋转换. , 2022, 71(15): 157801. doi: 10.7498/aps.71.20220305
[3]	曹兴忠, 宋力刚, 靳硕学, 张仁刚, 王宝义, 魏龙. 正电子湮没谱学研究半导体材料微观结构的应用进展. , 2017, 66(2): 027801. doi: 10.7498/aps.66.027801
[4]	严达利, 李申予, 刘士余, 竺云. 银纳米颗粒/多孔硅复合材料的制备与气敏性能研究. , 2015, 64(13): 137102. doi: 10.7498/aps.64.137102
[5]	严达利, 李申予, 刘士余, 竺云. 银纳米颗粒/多孔硅复合材料的制备与气敏性能研究. , 2015, 64(13): 137104. doi: 10.7498/aps.64.137104
[6]	陈颖, 范卉青, 卢波. 带多孔硅表面缺陷腔的半无限光子晶体Tamm态及其折射率传感机理. , 2014, 63(24): 244207. doi: 10.7498/aps.63.244207
[7]	张铮, 徐智谋, 孙堂友, 徐海峰, 陈存华, 彭静. 纳米压印多孔硅模板的研究. , 2014, 63(1): 018102. doi: 10.7498/aps.63.018102
[8]	许红霞, 郝颖萍, 韩荣典, 翁惠民, 杜淮江, 叶邦角. 纳米Fe3 O4 颗粒的正电子湮没谱学研究. , 2011, 60(6): 067803. doi: 10.7498/aps.60.067803
[9]	许路加, 胡明, 杨海波, 杨孟琳, 张洁. 基于微结构参数建模的多孔硅绝热层热导率研究. , 2010, 59(12): 8794-8800. doi: 10.7498/aps.59.8794
[10]	李卓昕, 王丹妮, 王宝义, 薛德胜, 魏龙, 秦秀波. 水蒸气退火多孔硅发光性能的正电子谱学研究. , 2010, 59(12): 8915-8919. doi: 10.7498/aps.59.8915
[11]	刘光友, 谭兴文, 姚金才, 王振, 熊祖洪. 电化学制备薄黑硅抗反射膜. , 2008, 57(1): 514-518. doi: 10.7498/aps.57.514
[12]	杨海波, 胡明, 张伟, 张绪瑞, 李德军, 王明霞. 基于纳米压痕法的多孔硅硬度及杨氏模量与微观结构关系研究. , 2007, 56(7): 4032-4038. doi: 10.7498/aps.56.4032
[13]	邸玉贤, 计欣华, 胡明, 秦玉文, 陈金龙. 基片曲率法在多孔硅薄膜残余应力检测中的应用. , 2006, 55(10): 5451-5454. doi: 10.7498/aps.55.5451
[14]	邱学军, 张云鹏, 何正红, 白浪, 刘国磊, 王跃, 陈鹏, 熊祖洪. 矫顽力可调的多孔硅基Fe膜. , 2006, 55(11): 6101-6107. doi: 10.7498/aps.55.6101
[15]	刘小兵, 史向华, 廖太长, 任鹏, 柳玥, 柳毅, 熊祖洪, 丁训民, 侯晓远. 声空化物理化学综合法制备发光多孔硅薄膜的微结构与发光特性. , 2005, 54(1): 416-421. doi: 10.7498/aps.54.416
[16]	白莹, 兰燕娜, 莫育俊. 拉曼光谱法计算多孔硅样品的温度. , 2005, 54(10): 4654-4658. doi: 10.7498/aps.54.4654
[17]	徐大印, 刘彦平, 何志巍, 方泽波, 刘雪芹, 王印月. 多孔硅衬底上溅射沉积SiC:Tb薄膜的光致发光行为. , 2004, 53(8): 2694-2698. doi: 10.7498/aps.53.2694
[18]	彭爱华, 谢二庆, 姜宁, 张志敏, 李鹏, 贺德衍. 稀土（Tb，Gd）掺杂多孔硅的光致发光性能研究. , 2003, 52(7): 1792-1796. doi: 10.7498/aps.52.1792
[19]	梁二军, 晁明举. 激光诱导多孔硅晶格畸变的Raman光谱和光致发光谱研究. , 2001, 50(11): 2241-2246. doi: 10.7498/aps.50.2241
[20]	吕明, 徐少辉, 张松涛, 何钧, 熊祖洪, 邓振波, 丁训民. 基于多孔硅分布Bragg反射镜的有机微腔的光学性质. , 2000, 49(10): 2083-2088. doi: 10.7498/aps.49.2083

计量

文章访问数: 9080
PDF下载量: 824
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板