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We report on the magnetic tunneling properties of weakly coupled GaAs/AlGaAs/InGaAs double quantum well tunneling structure at low temperature (15 K) in a magnetic field applied parallel to the tunneling current. The device is in resonance at zero bias voltage. From an analysis of the oscillations in magneto-conductivity for different bias voltages, the change in ground-state energy levels in two quantum wells with the bias can be confirmed and thus the tunneling mechanism was studied. The results reported in this paper provide the basis for the successful fabrication of weakly coupled double quantum dot system.
[1] ［1］Tsu R, Esaki L 1973 Appl. Phys. Lett. 22 562
[2] ［2］Kouwenhoven L P, Austing D G, Tarucha S 2001 Rep. Prog. Phys. 64 701
[3] ［3］Reimann S M, Manninen M 2002 Rev. Mod. Phys. 74 1283
[4] ［4］Hanson R, Kouwenhoven L P, Petta J R, Tarucha S, Vandersypen L M K 2007 Rev. Mod. Phys. 79 1217
[5] ［5］Ashoori R C 1996 Nature 379 413
[6] ［6］Austing D G, Honda T, Tarucha S 1996 Semicond. Sci. Technol. 11 388
[7] ［7］Tarucha S, Austing D G, Honda T, van der Hage R J, Kouwenhoven L P 1996 Phys. Rev. Lett. 77 3613
[8] ［8］Kouwenhoven L P, Oosterkamp T H, Danoeastro M W S, Eto M, Austing D G, Honda T, Tarucha S 1997 Science 278 1788
[9] ［9］Sasaki S, De Franceschi S, Elzerman J M, van der Wiel W G, Eto M, Tarucha S, Kouwenhoven L P 2000 Nature 405 764
[10] ］Ono K, Austing D G, Tokura Y, Tarucha S 2002 Science 297 1313
[11] ］Weinmann D W, Husler W, Kramer B 1995 Phys. Rev. Lett. 74 984
[12] ］Christanell R, Smoliner J 1988 Rev. Sci. Instrum. 59 8
[13] ］Mendez E E, Esaki L, Wang W I 1986 Phys. Rev. B 33 2893
[14] ］Leadbeater M L, Alves E S, Eaves L, Henini M, Hughes O H,Celeste A, Portal J C, Hill G, Pate M A 1989 Phys. Rev. B 39 3438
[15] ］Goldman V J, Tsui D C, Cunningham J E 1987 Phys. Rev. Lett. 58 1256
[16] ］Zhou W Z, Yao W, Zhu B, Qiu Z J, Guo S L, Lin T, Cui L J, Gui Y S, Chu J H 2006 Acta Phys. Sin. 55 2044 (in Chinese) ［周文政、姚炜、朱博、仇志军、郭少令、林铁、崔利杰、桂永胜、褚君浩 2006 55 2044］
[17] ］Zhou W Z, Lin T, Shang L Y, Huang Z M, Zhu B, Cui L J, Gao H L, Li D L, Guo S L, Gui Y S, Chu J H 2007 Acta Phys. Sin. 56 4143 (in Chinese) ［周文政、林铁、商丽燕、黄志明、朱博、崔利杰、高宏玲、李冬临、郭少令、桂永胜、褚君浩 2007 56 4143］
[18] ］Tagg W I E, White C R H, Skolnick M S, Eaves L, Emeny M T, Whitehouse C R 1993 Phys. Rev. B 48 4487
[19] ］Yu G, Gupta J A, Aers G C, Austing D G 2005 Semicond. Sci. Tech. 20 430
[20] ］Eaves L, Toombs G A, Sheard F W, Payling C A, Leadbeater M L, Alves E S, Foster T J, Simmonds P E, Henini M, Hughes O H, Portal J C, Hill G, Pate M A 1988 Appl. Phys. Lett. 52 212
[21] ］Smet J H, Fonstad C G, Hu Q 1993 Appl. Phys. Lett. 63 2225
[22] ］Jusserand B, Sapriel J 1981 Phys. Rev. B 24 7194
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[1] ［1］Tsu R, Esaki L 1973 Appl. Phys. Lett. 22 562
[2] ［2］Kouwenhoven L P, Austing D G, Tarucha S 2001 Rep. Prog. Phys. 64 701
[3] ［3］Reimann S M, Manninen M 2002 Rev. Mod. Phys. 74 1283
[4] ［4］Hanson R, Kouwenhoven L P, Petta J R, Tarucha S, Vandersypen L M K 2007 Rev. Mod. Phys. 79 1217
[5] ［5］Ashoori R C 1996 Nature 379 413
[6] ［6］Austing D G, Honda T, Tarucha S 1996 Semicond. Sci. Technol. 11 388
[7] ［7］Tarucha S, Austing D G, Honda T, van der Hage R J, Kouwenhoven L P 1996 Phys. Rev. Lett. 77 3613
[8] ［8］Kouwenhoven L P, Oosterkamp T H, Danoeastro M W S, Eto M, Austing D G, Honda T, Tarucha S 1997 Science 278 1788
[9] ［9］Sasaki S, De Franceschi S, Elzerman J M, van der Wiel W G, Eto M, Tarucha S, Kouwenhoven L P 2000 Nature 405 764
[10] ］Ono K, Austing D G, Tokura Y, Tarucha S 2002 Science 297 1313
[11] ］Weinmann D W, Husler W, Kramer B 1995 Phys. Rev. Lett. 74 984
[12] ］Christanell R, Smoliner J 1988 Rev. Sci. Instrum. 59 8
[13] ］Mendez E E, Esaki L, Wang W I 1986 Phys. Rev. B 33 2893
[14] ］Leadbeater M L, Alves E S, Eaves L, Henini M, Hughes O H,Celeste A, Portal J C, Hill G, Pate M A 1989 Phys. Rev. B 39 3438
[15] ］Goldman V J, Tsui D C, Cunningham J E 1987 Phys. Rev. Lett. 58 1256
[16] ］Zhou W Z, Yao W, Zhu B, Qiu Z J, Guo S L, Lin T, Cui L J, Gui Y S, Chu J H 2006 Acta Phys. Sin. 55 2044 (in Chinese) ［周文政、姚炜、朱博、仇志军、郭少令、林铁、崔利杰、桂永胜、褚君浩 2006 55 2044］
[17] ］Zhou W Z, Lin T, Shang L Y, Huang Z M, Zhu B, Cui L J, Gao H L, Li D L, Guo S L, Gui Y S, Chu J H 2007 Acta Phys. Sin. 56 4143 (in Chinese) ［周文政、林铁、商丽燕、黄志明、朱博、崔利杰、高宏玲、李冬临、郭少令、桂永胜、褚君浩 2007 56 4143］
[18] ］Tagg W I E, White C R H, Skolnick M S, Eaves L, Emeny M T, Whitehouse C R 1993 Phys. Rev. B 48 4487
[19] ］Yu G, Gupta J A, Aers G C, Austing D G 2005 Semicond. Sci. Tech. 20 430
[20] ］Eaves L, Toombs G A, Sheard F W, Payling C A, Leadbeater M L, Alves E S, Foster T J, Simmonds P E, Henini M, Hughes O H, Portal J C, Hill G, Pate M A 1988 Appl. Phys. Lett. 52 212
[21] ］Smet J H, Fonstad C G, Hu Q 1993 Appl. Phys. Lett. 63 2225
[22] ］Jusserand B, Sapriel J 1981 Phys. Rev. B 24 7194
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