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The hardness of 4H-SiC, which was high-temperature (500 K) helium-implanted to fluences of 3×1016 ions cm-2 and subsequently thermally annealed at the temperature ranging from 773 to 1273 K, was studied by nanoindentation. It is found that the hardness of the implanted 4H-SiC increases at the first, then decreases, and then increases again with increasing annealing tempeature in the temperature range of 500—1273 K, and significant increase in hardness is observed at 773 K. The behavior is ascribed to the changes of the density, length, and tangling of the covalent Si—C bond through the recombination of point defects, clustering of He-vacancy, and growth of helium bubbles during the thermal annealing.
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Keywords:
- silicon carbide /
- implantation /
- He bubbles /
- nano-indentation
[1] ［1］ Song J X, Yang Y T, Liu H X, Zhang Z Y 2008 Acta Phys. Sin. 58 4883 (in Chinese) ［宋久旭、杨银堂、刘红霞、张志勇 2008 58 4883］
[2] ［2］Weber W J, Yu N, Wang L M 1998 Mater. Sci. Eng. A 253 62
[3] ［3］Ziegler J F, Biersack J P, Littmar U 1985 The Stopping and Range of Ions in Solids （New York: Pergamon Press）Vol 1
[4] ［4］Wang C L 2007 M. S. Thesis (Shanghai: Shanghai Research Institute of Materials) (in Chinese) ［王春亮 2007 硕士学位论文 (上海：上海材料研究所)］
[5] ［5］Tromas C, Audurier V, Leclerc S, Beaufort M F, Declemy A, Barbot J F 2008 Nucl. Instr. Meth. Phys. Res.B 266 2776
[6] ［6］Nix W D, Gao H J 1998 J. Mech. Phys. Solids 46 411
[7] ［7］Zhang C H, Donnelly S E, Vishnyakov V M, Evans J H 2003 J. Appl. Phys. 94 6017
[8] ［8］Sasaki K, Maruyama T, Iseki T 1989 J. Nucl. Mater. 168 349
[9] ［9］Zhang C H, Donnelly S E, Vishnyakov V M, Evans J H, Shibayama T, Sun Y M 2004 Nucl. Instr. Meth. Phys. Res. B 218 53
[10] ］Gao F M, He J L, Wu E D, Liu S M, Yu D L, Li D C, Zhang S Y, Tian Y J 2003 Phys. Rev. Lett. 91 015502
[11] ］Gao F, Weber W J 2004 Phys. Rev. B 69 224108
[12] ］Corelli J C, Hoole J, Lazzaro J， Lee C W 1983 J. Am. Ceram. Soc. 66 529
[13] ］Snead L L, Scholz R, Hasegawa A, Frias Rebelo A 2002 J. Nucl. Mater. 307—311 1141
[14] ］Wang H Y, Zhu W J, Song Z F, Liu S J, Chen X R, He H L 2008 Acta Phys. Sin. 57 3703 (in Chinese) ［王海燕、祝文军、宋振飞、刘绍军、陈向荣、贺红亮 2008 57 3703］
[15] ］Hong J, Ye Y Z 1965 Acta Phys. Sin. 21 1968 (in Chinese) ［洪晶、叶以正 1965 21 1968］
[16] ］Loomis B A, Smith D L 1986 J. Nucl. Mater. 141—143 617
[17] ］Hasegawa A, Oliver B M, Nogami S, Abe K, Jones R H 2000 J. Nucl. Mater. 283 811
[18] ］Hojou K, Furuno S, Kushita K N, Otsu H, Furuya Y, Lzui K 1996 Nucl. Instr. Meth. Phys. Res. B 116 382
[19] ］Sasaki K, Maruyama T, Iseki T 1989 J. Nucl. Mater. 179 407
[20] ］Snead L L, Katoh Y， Connery S 2007 J. Nucl. Mater. 367—370 677
[21] ］Itoh H, Hayakawa N, Nashiyama I 1989 J. Appl. Phys. 66 4529
[22] ］Kawasuso A, Itoh H, Cha D 1998 Appl. Phys. A 67 209
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[1] ［1］ Song J X, Yang Y T, Liu H X, Zhang Z Y 2008 Acta Phys. Sin. 58 4883 (in Chinese) ［宋久旭、杨银堂、刘红霞、张志勇 2008 58 4883］
[2] ［2］Weber W J, Yu N, Wang L M 1998 Mater. Sci. Eng. A 253 62
[3] ［3］Ziegler J F, Biersack J P, Littmar U 1985 The Stopping and Range of Ions in Solids （New York: Pergamon Press）Vol 1
[4] ［4］Wang C L 2007 M. S. Thesis (Shanghai: Shanghai Research Institute of Materials) (in Chinese) ［王春亮 2007 硕士学位论文 (上海：上海材料研究所)］
[5] ［5］Tromas C, Audurier V, Leclerc S, Beaufort M F, Declemy A, Barbot J F 2008 Nucl. Instr. Meth. Phys. Res.B 266 2776
[6] ［6］Nix W D, Gao H J 1998 J. Mech. Phys. Solids 46 411
[7] ［7］Zhang C H, Donnelly S E, Vishnyakov V M, Evans J H 2003 J. Appl. Phys. 94 6017
[8] ［8］Sasaki K, Maruyama T, Iseki T 1989 J. Nucl. Mater. 168 349
[9] ［9］Zhang C H, Donnelly S E, Vishnyakov V M, Evans J H, Shibayama T, Sun Y M 2004 Nucl. Instr. Meth. Phys. Res. B 218 53
[10] ］Gao F M, He J L, Wu E D, Liu S M, Yu D L, Li D C, Zhang S Y, Tian Y J 2003 Phys. Rev. Lett. 91 015502
[11] ］Gao F, Weber W J 2004 Phys. Rev. B 69 224108
[12] ］Corelli J C, Hoole J, Lazzaro J， Lee C W 1983 J. Am. Ceram. Soc. 66 529
[13] ］Snead L L, Scholz R, Hasegawa A, Frias Rebelo A 2002 J. Nucl. Mater. 307—311 1141
[14] ］Wang H Y, Zhu W J, Song Z F, Liu S J, Chen X R, He H L 2008 Acta Phys. Sin. 57 3703 (in Chinese) ［王海燕、祝文军、宋振飞、刘绍军、陈向荣、贺红亮 2008 57 3703］
[15] ］Hong J, Ye Y Z 1965 Acta Phys. Sin. 21 1968 (in Chinese) ［洪晶、叶以正 1965 21 1968］
[16] ］Loomis B A, Smith D L 1986 J. Nucl. Mater. 141—143 617
[17] ］Hasegawa A, Oliver B M, Nogami S, Abe K, Jones R H 2000 J. Nucl. Mater. 283 811
[18] ］Hojou K, Furuno S, Kushita K N, Otsu H, Furuya Y, Lzui K 1996 Nucl. Instr. Meth. Phys. Res. B 116 382
[19] ］Sasaki K, Maruyama T, Iseki T 1989 J. Nucl. Mater. 179 407
[20] ］Snead L L, Katoh Y， Connery S 2007 J. Nucl. Mater. 367—370 677
[21] ］Itoh H, Hayakawa N, Nashiyama I 1989 J. Appl. Phys. 66 4529
[22] ］Kawasuso A, Itoh H, Cha D 1998 Appl. Phys. A 67 209
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