The process of doping of Zn into GaN induced by nanosecond pulse laser is analyzed in this paper. An analytical formula of temperature distribution in GaN material irradiated by pulsed laser is presented using one_dimensional model. The relation of surface temperature versus irradiation time and thermal deformation versus depth are obtained. The results show that the surface temperature is in proportion to the square root of irradiation time. The distributions of temperature and thermal deformation in the material are also obtained. The temperature gradiant and the thermal deformation are all highest near the surface. However, the temperature of surface increases in a saw_tooth manner when the material is irradiated continuously by pulseed laser.