基于无源超高频射频识别标签的湿度传感器设计

邓芳明; 何怡刚; 佐磊; 李兵; 吴可汗

doi:10.7498/aps.63.188402

摘要

针对无源超高频射频识别传感器标签大规模运用的需求，采用中芯国际0.35 μm 互补金属氧化物半导体（CMOS）工艺设计并制造了一种低成本、低功耗的湿度传感器. 湿度传感器单元采用聚酰亚胺作为感湿材料，利用顶层金属层制作叉指结构电极，制造过程与标准CMOS制造工序兼容，无需任何后处理工艺. 接口电路部分基于锁相环原理，采用全数字电容-数字直接转换结构，能够工作在接近工艺阈值电压下. 后期测试结果显示，该湿度传感器在常温下灵敏度为36.5 fF%RH，最大回滞偏差为7%，响应时间为20 ms，0.6 V电源电压下消耗2.1 μW功率.

关键词:

Abstract

This paper presents a low-cost low-power humidity sensor for applications of ultra-high frequency radio frequency identification sensing tag. The humidity sensor element, based on standard SMIC 0.35 μm complementary metal-oxide-semiconductor technology, utilizes polyimide as sensing material and fabricates the interdigitated electrodes in top metal layer without any further post-processing. The humidity sensor interface, based on phase-locked loop theory, employs fully-digital architecture and achieves direct capacitance-to-digital conversion, which allows the supply voltage to be close to threshold voltage. The measurements at 25 ℃ show that the proposed humidity sensor achieves a sensitivity of 36.5 fF%RH, maximum hysteresis error of 7%, response time of 20 ms, and 2.1 μW power dissipation at 0.6 V supply voltage.

Keywords:

作者及机构信息

1.
合肥工业大学电气与自动化工程学院, 合肥 290009;

2.
华东交通大学电气与电子工程学院, 南昌 330013

基金项目: 国家杰出青年科学基金（批准号：50925727）、国防科技预研项目（批准号：C1120110004）、教育部科学技术研究重大项目基金（批准号：313018）和安徽省科技计划重点项目（批准号：1301022036）资助的课题.

Authors and contacts

1.
School of Electrical Engineering and Automation, Hefei University of Technology, Hefei 290009, China;

2.
School of Electrical and Electronic Engineering, East China JiaoTong University, Nanchang 330013, China

Funds: Project supported by the National Science Fund for Distinguished Young Scholars of China (Grant No. 50925727), the Chinese Defence Advance Research Program of Science and Technology, China (Grant No. C1120110004), the Foundation for Key Program of Ministry of Education, China (Grant No. 313018) and the Key Science and Technology Project of Anhui Province of China (Grant No. 1301022036).

参考文献

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[29]	Danneels H, Piette F, De Smedt V, Dehaene W, Gielen G 2011 Sens. Actuat. A: Physical 172 220
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[32]	Kerem K, Jose Luis Merino P, Catherine D 2013 Proceedings of the 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) Villach, Austria, July 3-7, 2013 p231

施引文献

[1]	Li B, He Y G, Hou Z G, She K, Zuo L 2011 Acta Phys. Sin. 60 084202(in Chinese)[李兵, 何怡刚, 侯周国, 佘开, 佐磊 2011 60 084202]
[2]	Zuo L, He Y G, Li B, Zhu Y Q, Fang G F 2013 Acta Phys. Sin. 62 044102(in Chinese)[佐磊, 何怡刚, 李兵, 朱彦卿, 方葛丰 2013 62 044102]
[3]	Zuo L, He Y G, Li B, Zhu Y Q, Fang G F 2012 Acta Phys. Sin. 61 244103(in Chinese)[佐磊, 何怡刚, 李兵, 朱彦卿, 方葛丰 2012 61 244103]
[4]	Zuo L, He Y G, Li B, Zhu Y Q, Fang G F 2013 Acta Phys. Sin. 62 144101(in Chinese)[佐磊, 何怡刚, 李兵, 朱彦卿, 方葛丰 2013 62 144101]
[5]	Hou Z G, He Y G, Li B, She K, Zhu Y Q 2010 Acta Phys. Sin. 59 5606(in Chinese)[侯周国, 何怡刚, 李兵, 佘开, 朱彦卿 2010 59 5606]
[6]	Beriain A, Rebollo I, Fernandez I, Sevillano J F, Berenguer R 2012 Proceedings of 2012 International Microwave Symposium Digest Montreal June 17-22, 2012 (Canada) p1
[7]	Catarinucci L, Colella R, Tarricone L 2013 IEEE Microwave and Wireless Compon. Lett. 23 49
[8]	Wang B, Law M K 2014 IEEE Trans. Circ. Syst. I: Regular Papers 61 337
[9]	Sahafi A, Sobhi J, Koozehkanani Z D 2013 Analog Integrated Circuits and Signal Processing 75 343
[10]	Chani M T S, Karimov K S, Khalid F A, Abbas S Z, Bhatty M B 2013 Chin. Phys. B 22 010701
[11]	Chen Z, Lu C 2005 Sens. Lett. 3 274
[12]	Gu L, Huang Q A, Qin M 2004 Sens. Actuat. B: Chemical 99 491
[13]	Zhao C L, Qin M, Huang Q A 2011 IEEE Sens. J. 11 2986
[14]	Wang B, Law M K, Bermak A 2012 Proceedings of the 4th Asia Symposium on Quality Electronic Design Penang, Malaysia, July 10-11, 2012 p95
[15]	Dai C L, Lu D H 2010 Proceedings of the 5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems Nice, France, January 20-23, 2010 p110
[16]	Nizhnik O, Higuchi K, Maenaka K 2012 Sensors 12 226
[17]	Paavola M, Kamarainen M, Laulainen E, Saukoski M, Koskinen L, Kosunen M, Halonen K A 2009 IEEE J. Solid-State Circ. 44 3193
[18]	Shin D Y, Lee H, Kim S 2011 IEEE Trans. Circ. Syst. Ⅱ: Express Briefs 58 90
[19]	Xia S, Makinwa K, Nihtianov S 2012 Proceedings of 2012 IEEE International Solid-State Circuits Conference San Francisco, USA, Feb. 19-23, 2012 p198
[20]	Tan Z C, Daamen R, Humbert A, Ponomarev Y V, Chae Y C, Pertijs M A 2013 IEEE J. Solid-State Circ. 48 2469
[21]	Nguyen T T, Hafliger P 2013 Proceedings of IEEE Biomedical Circuits and Systems Conference Rotterdam, Netherlands, Oct. 31-Nov. 2, 2013 p326
[22]	Sheu M L, Hsu W H, Tsao L J 2012 IEEE Trans. Instrum. Measur. 61 447
[23]	Tan Z C, Shalmany S H, Meijer G C, Pertijs M A 2012 IEEE J. Solid-State Circ. 47 1703
[24]	Nizza N, Dei M, Butti F, Bruschi P 2013 IEEE Trans. Circ. Syst. I: Regular Papers 60 1419
[25]	Laconte J, Wilmart V, Raskin J P, Flandre D 2003 Proceedings of 2003 IEEE Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS Cannes, France, April 25-27, 2003, p223
[26]	Looyenga H 1965 Physica 31 401
[27]	Schubert P J, Nevin J H 1985 IEEE Trans. Electron Dev. 32 1220
[28]	Wang B, Law M K, Bermak A 2012 Proceedings of the 4th Asia Symposium on Quality Electronic Design Penang, Malaysia, Aug. 3-5, 2012 p95
[29]	Danneels H, Piette F, De Smedt V, Dehaene W, Gielen G 2011 Sens. Actuat. A: Physical 172 220
[30]	Zhu S H, Si L M, Guo C, Shi J Y, Zhu W R 2014 Chin. Phys. B 23 078404
[31]	Huang J F, Liu R Y, Lai W C, Shin C W, Hsu C M 2012 Chin. Phys. B 23 084210
[32]	Kerem K, Jose Luis Merino P, Catherine D 2013 Proceedings of the 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) Villach, Austria, July 3-7, 2013 p231

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