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CdTe量子点的室温激子自旋弛豫动力学

朱孟龙 董玉兰 钟海政 何军

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CdTe量子点的室温激子自旋弛豫动力学

朱孟龙, 董玉兰, 钟海政, 何军

Exciton spin relaxation dynamics in CdTe quantum dots at room temperature

Zhu Meng-Long, Dong Yu-Lan, Zhong Hai-Zheng, He Jun
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  • 利用交叉偏振三阶非线性瞬态光栅技术,研究了室温下CdTe胶体量子点激子自旋弛豫动力学的尺寸效应. 在抽运-探测光子能量与CdTe量子点的最低激子吸收(1Se1Sh)跃迁相共振时,量子点激子自旋弛豫显示了时间常数为0.10.5 ps的单指数衰减行为. CdTe量子点激子自旋的快速弛豫源于亮暗激子精细结构态跃迁,即J=1+2跃迁. 激子自旋弛豫主要由空穴的自旋翻转过程决定. 研究结果表明:CdTe量子点激子自旋弛豫速率与量子点尺寸的4 次方成反比.
    Size-dependent exciton spin relaxation dynamics in CdTe colloidal quantum dots is studied at room temperature with the cross-polarized heterodyne third-order nonlinear transient grating technique The CdTe exciton spin relaxation reveals a mono-exponential decay behavior with a time constant of 0.1-0.5 ps when the pump-probe photon energy is tuned to be in resonance with the lowest exciton absorption transition (1Se-1Sh). The exciton spin relaxation in quantum dot is mainly governed by the hole spin flip process and ascribed to the transitions between bright-dark exciton fine structure states, i.e. J= 1+2. This finding suggests that the exciton spin relaxation rate in CdTe quantum dot is inversely proportional to the fourth power of quantum dot size.
    • 基金项目: 国家自然科学基金(批准号:61222406,11174371)、湖南省自然科学基金(批准号:12JJ1001)、高等学校博士学科点专项科研基金(批准号:20110162120072)、教育部新世纪优秀人才支持计划(批准号:NCET-11-0512)和中央高校基本科研业务费资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61222406, 11174371), the Natural Science Foundation of Hunan Province, China (Grant No. 12JJ1001), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20110162120072), the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-11-0512), and the Fundamental Research Fund for the Central Universities, China.
    [1]

    Gupta J A, Knobel R, Samarth N, Awschalom D D 2001 Science 292 2458

    [2]

    Ouyang M, Dabid D, Awschalom D D 2003 Science 301 1074

    [3]

    Ramsay A J 2010 Semi. Sci. Technol. 25 103001

    [4]

    Tong H, Wu M W 2011 Phys. Rev. B 83 235323

    [5]

    Ma S S, Dou X M, Chang X Y, Sun B Q, Xiong Y H, Niu Z C, Ni H Q 2009 Chin. Phys. Lett. 26 117201

    [6]

    Gupta J A, Awschalom D D, Peng X, Alivisatos A P 1999 Phys. Rev. B 59 R10421

    [7]

    Tartakovskii A I, Cahill J, Makhonin M N, Whittaker D M, Wells J P R, Fox A M, Mowbray D J, Skolnick M S, Groom K M, Steer M J, Hopkinson M 2004 Phys. Rev. Lett. 93 057401

    [8]

    Nair P S, Fritz K P, Scholes G D 2004 Chem. Comm. 18 2084

    [9]

    Yu W W, Qu L H, Guo W Z, Peng X G 2003 Chem. Mater. 15 2854

    [10]

    Zhong H Z, Nagy M, Jones M, Scholes G D 2009 J. Phys. Chem. C 113 10465

    [11]

    An L M, Yang Y Q, Song W S, Su W H, Zeng Q H, Chao K F, Kong X G 2009 Acta Phys. Sin. 58 7914 (in Chinese) [安利民, 杨延强, 宋维斯, 苏文辉, 曾庆辉, 朝克夫, 孔祥贵 2009 58 7914]

    [12]

    Gerardot B D, Brunner D, Dalgarno P A, Ohberg P, Seidl S, Kroner M, Karrai K, Stoltz N G, Petroff P M, Warburton R J 2008 Nature 451 441

    [13]

    Brunner D, Gerardot B D, Dalgarno P A, Wust G, Laraai K, Stoltz N G, Petroff P M, Warburton R J 2009 Science 325 70

    [14]

    Scholes G D, Kim J, Wong C Y 2006 Phys. Rev. B 73 195325

    [15]

    Huxter V M, Kim J, Lo S S, Lee A, Nair P S, Scholes G D 2010 Chem. Phys. Lett. 491 187

    [16]

    Kim J, Wong C Y, Nair P S, Fritz K P, Kumar S, Scholes G D 2006 J. Phys. Chem. B 110 25371

    [17]

    Scholes G D, Kim J, Wong C Y, Huxter V M, Nair P S, Fritz K P, Kumar S 2006 Nano Lett. 6 1765

    [18]

    He J, Zhong H Z, Scholes G D 2010 Phys. Rev. Lett. 105 046601

    [19]

    He J, Lo S S, Kim J, Scholes G D 2008 Nano Lett. 8 4007

    [20]

    Wong C Y, Kim J, Nair P S, Nagy M C, Scholes G D 2009 J. Phys. Chem. C 113 795

    [21]

    Brus L E 1984 J. Chem. Phys. 80 4403

    [22]

    Efros A L, Rosen M, Kuno M, Nirmal M, Norris D J 1996 Phys. Rev. B 54 4843

    [23]

    Nahalkova P, Sprinzl D, Maly P, Nemec P, Gladilin V N, Devreese J T 2007 Phys. Rev. B 75 113306

    [24]

    Pikus G E, Bir G L 1971 Sov. Phys. JEPT 33 108

    [25]

    Vinattieri A, Shah J, Damen T C, Kim D S, Pfeiffer L N, Maialle M Z, Sham L J 1994 Phys. Rev. B 50 10868

    [26]

    Ma H, Jin Z, Zhang Z, Li G, Ma G 2012 J. Phys. Chem. A 116 2018

    [27]

    He J, Ji W, Ma G H, Tang S H, Elim H L, Sun W X, Zhang Z H, Chin W S 2004 J. Appl. Phys. 95 6381

    [28]

    Viswanatha R, Sapra S, Saha-Dasgupta T, Sarma D D 2005 Phys. Rev. B 72 045333

    [29]

    Atature M, Dreiser J, Badolato A, Hogele A, Karrai K, Imamoglu A 2006 Science 312 551

    [30]

    Gupta J A, Awschalom D D, Efros A L, Rodina A V 2002 Phys. Rev. B 66 125307

    [31]

    Gundogdu K, Hall K C, Koerperick E J, Pryor C E, Flatté M E, Boggess T F 2005 Appl. Phys. Lett. 86 113111

    [32]

    Hall K C, Koerperick E J, Boggess T F, Shchekin O B 2007 Appl. Phys. Lett. 90 053109

    [33]

    Fischer J, Loss D 2009 Science 324 1277

    [34]

    Kolodrubetz M H, Petta J R 2009 Science 325 42

  • [1]

    Gupta J A, Knobel R, Samarth N, Awschalom D D 2001 Science 292 2458

    [2]

    Ouyang M, Dabid D, Awschalom D D 2003 Science 301 1074

    [3]

    Ramsay A J 2010 Semi. Sci. Technol. 25 103001

    [4]

    Tong H, Wu M W 2011 Phys. Rev. B 83 235323

    [5]

    Ma S S, Dou X M, Chang X Y, Sun B Q, Xiong Y H, Niu Z C, Ni H Q 2009 Chin. Phys. Lett. 26 117201

    [6]

    Gupta J A, Awschalom D D, Peng X, Alivisatos A P 1999 Phys. Rev. B 59 R10421

    [7]

    Tartakovskii A I, Cahill J, Makhonin M N, Whittaker D M, Wells J P R, Fox A M, Mowbray D J, Skolnick M S, Groom K M, Steer M J, Hopkinson M 2004 Phys. Rev. Lett. 93 057401

    [8]

    Nair P S, Fritz K P, Scholes G D 2004 Chem. Comm. 18 2084

    [9]

    Yu W W, Qu L H, Guo W Z, Peng X G 2003 Chem. Mater. 15 2854

    [10]

    Zhong H Z, Nagy M, Jones M, Scholes G D 2009 J. Phys. Chem. C 113 10465

    [11]

    An L M, Yang Y Q, Song W S, Su W H, Zeng Q H, Chao K F, Kong X G 2009 Acta Phys. Sin. 58 7914 (in Chinese) [安利民, 杨延强, 宋维斯, 苏文辉, 曾庆辉, 朝克夫, 孔祥贵 2009 58 7914]

    [12]

    Gerardot B D, Brunner D, Dalgarno P A, Ohberg P, Seidl S, Kroner M, Karrai K, Stoltz N G, Petroff P M, Warburton R J 2008 Nature 451 441

    [13]

    Brunner D, Gerardot B D, Dalgarno P A, Wust G, Laraai K, Stoltz N G, Petroff P M, Warburton R J 2009 Science 325 70

    [14]

    Scholes G D, Kim J, Wong C Y 2006 Phys. Rev. B 73 195325

    [15]

    Huxter V M, Kim J, Lo S S, Lee A, Nair P S, Scholes G D 2010 Chem. Phys. Lett. 491 187

    [16]

    Kim J, Wong C Y, Nair P S, Fritz K P, Kumar S, Scholes G D 2006 J. Phys. Chem. B 110 25371

    [17]

    Scholes G D, Kim J, Wong C Y, Huxter V M, Nair P S, Fritz K P, Kumar S 2006 Nano Lett. 6 1765

    [18]

    He J, Zhong H Z, Scholes G D 2010 Phys. Rev. Lett. 105 046601

    [19]

    He J, Lo S S, Kim J, Scholes G D 2008 Nano Lett. 8 4007

    [20]

    Wong C Y, Kim J, Nair P S, Nagy M C, Scholes G D 2009 J. Phys. Chem. C 113 795

    [21]

    Brus L E 1984 J. Chem. Phys. 80 4403

    [22]

    Efros A L, Rosen M, Kuno M, Nirmal M, Norris D J 1996 Phys. Rev. B 54 4843

    [23]

    Nahalkova P, Sprinzl D, Maly P, Nemec P, Gladilin V N, Devreese J T 2007 Phys. Rev. B 75 113306

    [24]

    Pikus G E, Bir G L 1971 Sov. Phys. JEPT 33 108

    [25]

    Vinattieri A, Shah J, Damen T C, Kim D S, Pfeiffer L N, Maialle M Z, Sham L J 1994 Phys. Rev. B 50 10868

    [26]

    Ma H, Jin Z, Zhang Z, Li G, Ma G 2012 J. Phys. Chem. A 116 2018

    [27]

    He J, Ji W, Ma G H, Tang S H, Elim H L, Sun W X, Zhang Z H, Chin W S 2004 J. Appl. Phys. 95 6381

    [28]

    Viswanatha R, Sapra S, Saha-Dasgupta T, Sarma D D 2005 Phys. Rev. B 72 045333

    [29]

    Atature M, Dreiser J, Badolato A, Hogele A, Karrai K, Imamoglu A 2006 Science 312 551

    [30]

    Gupta J A, Awschalom D D, Efros A L, Rodina A V 2002 Phys. Rev. B 66 125307

    [31]

    Gundogdu K, Hall K C, Koerperick E J, Pryor C E, Flatté M E, Boggess T F 2005 Appl. Phys. Lett. 86 113111

    [32]

    Hall K C, Koerperick E J, Boggess T F, Shchekin O B 2007 Appl. Phys. Lett. 90 053109

    [33]

    Fischer J, Loss D 2009 Science 324 1277

    [34]

    Kolodrubetz M H, Petta J R 2009 Science 325 42

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  • 被引次数: 0
出版历程
  • 收稿日期:  2014-02-16
  • 修回日期:  2014-04-14
  • 刊出日期:  2014-06-05

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