基于压缩表示的离子刻蚀仿真三维表面演化方法

杨宏军; 宋亦旭; 郑树琳; 贾培发

doi:10.7498/aps.62.208201

摘要

为了研究表面演化过程的机理, 提出了一种基于压缩表示的三维表面演化方法来模拟等离子体刻蚀工艺,并着重探讨了对离子刻蚀的仿真. 为了解决三维元胞自动机内存需求量大的问题, 该方法将二维数组和动态存储方式相结合, 既实现元胞信息的无损压缩存储, 又保持三维元胞间的空间相关性. 实验结果也表明该方法不仅节省了大量内存, 而且在高分辨率条件下查找离子初始碰撞的表面元胞效率较高, 满足高分辨率仿真的要求. 将该方法应用于实现刻蚀工艺三维表面仿真中, 模拟结果与实验结果对比验证了该方法的有效性.

关键词:

Abstract

In order to study the mechanism of the profile evolution process, a three-dimensional (3D) profile evolution method based on compression representation is proposed to simulate the plasma etching process and consider emphatically ion etching. To solve the problem of large memory requirements of 3D cellular model, the presented method adopts a new data structure, which combines two-dimensional array with dynamic storage, to represent cellular information. The structure realizes the lossless compression of cellular information and keeps the spatial correlation between 3D cells. The experimental results show that the method not only significantly reduces the memory, but also has a higher searching efficiency of surface cell which ion first passes through in high-resolution simulation. The method is applied to 3D profile evolution simulation of silicon etching process. A comparison between the simulation results and the experimental results also verifies the effectiveness of the proposed method.

Keywords:

作者及机构信息

1.
清华大学计算机科学与技术系, 智能技术与系统国家重点实验室, 清华信息科学与技术国家实验室, 北京 100084;

2.
沈阳炮兵学院, 沈阳 110162

基金项目: 国家科技重大专项(批准号: 2011ZX2403-002)资助的课题.

Authors and contacts

1.
State Key Laboratory on Intelligent Technology and Systems, Tsinghua National Laboratory for Information Science and Technology, Department of Computer Science and Technology, Tsinghua University, Beijing 100084, China;

2.
Shenyang Artillery Academy, Shenyang 110162, China

Funds: Project supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2011ZX2403-002).

参考文献

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[2]	Chang J P, Sawin H H 1997 J. Vac. Sci. Technol. A 15 610
[3]	Dai Z L, Mao M, Wang Y N 2006 Physics 35 693 (in Chinese) [戴忠玲, 毛明, 王友年 2006 物理 35 693]
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[6]	Kokkoris G, Tserepi A, Boudouvis A G, Gogolides E 2004 J. Vac. Sci. Technol. A 22 1896
[7]	Shimada T, Yagisawa T, Makabe T 2006 Jpn. J. App. Phys. 45 132
[8]	Ertl O, Selberherr S 2010 Microelectron. Eng. 87 20
[9]	Hoang J, Hsu C, Chang J P 2008 J. Vac. Sci. Technol. B 26 1911
[10]	Kawai H 2008 Ph. D. Dissertation. (Cambridge: Massachusetts Institute of Technology)
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[16]	Yue H, Shao C F, Chen X M, Hao H R 2008 Acta Phys. Sin. 57 6901 (in Chinese) [岳昊, 邵春福, 陈晓明, 郝合瑞 2008 57 6901]
[17]	Zhao H T, Mao H Y 2013 Acta Phys. Sin. 62 060501 (in Chinese) [赵韩涛, 毛宏燕 2013 62 060501]
[18]	Ren G, Lu L L, Wang W 2012 Acta Phys. Sin. 61 144501 (in Chinese) [任刚, 陆丽丽, 王炜 2012 61 144501]
[19]	Jin Z, Liu Q X, Mainul H 2007 Chin. Phys. 16 1267
[20]	Jin Z, Liu Q X 2006 Chin. Phys. 15 1248
[21]	Song Y R, Jiang G P, Xu J G 2011 Acta Phys. Sin. 60 120509 (in Chinese) [宋玉蓉, 蒋国平, 徐加刚 2011 60 120509]
[22]	Wang Y Q, Jiang G P 2011 Acta Phys. Sin. 60 080510 (in Chinese) [王亚奇, 蒋国平 2011 60 080510]
[23]	Ono K, Ohta H, Eriguchi K 2010 Thin Solid Films 518 3461
[24]	Chiaramonte L, Colombo R, Fazio G, Garozzo G, La Magna A 2012 Comp. Mater. Sci. 54 227
[25]	Du L Q, Li P, Liu J S 2008 Chin. J. Comput. 31 868 (in Chinese) [杜立群, 李璞, 刘军山 2008 计算机学报 31 868]
[26]	Zhou Z F, Huang Q A, Li W H, Lu W 2007 IEEE Trans. Comput. Aided Design Integr. Circuits Sys. 26 100
[27]	Chang J P, Arnold J C, Zau G C H, Shin H, Sawin H H 1997 J. Vac. Sci. Technol. A 15 1853
[28]	Fujimoto A, Tanaka T, Iwata K 1986 IEEE Comput. Graph. Appl. 6 16

施引文献

[1]	Chang J P, Mahorowala A P, Sawin H H 1998 J. Vac. Sci. Technol. A 16 217
[2]	Chang J P, Sawin H H 1997 J. Vac. Sci. Technol. A 15 610
[3]	Dai Z L, Mao M, Wang Y N 2006 Physics 35 693 (in Chinese) [戴忠玲, 毛明, 王友年 2006 物理 35 693]
[4]	Saussac J, Margot J, Chaker M 2009 J. Vac. Sci. Technol. A 27 130
[5]	Levinson J A, Shaqfeh E S G, Balooch M, Hamza A V 2000 J. Vac. Sci. Technol. B 18 172
[6]	Kokkoris G, Tserepi A, Boudouvis A G, Gogolides E 2004 J. Vac. Sci. Technol. A 22 1896
[7]	Shimada T, Yagisawa T, Makabe T 2006 Jpn. J. App. Phys. 45 132
[8]	Ertl O, Selberherr S 2010 Microelectron. Eng. 87 20
[9]	Hoang J, Hsu C, Chang J P 2008 J. Vac. Sci. Technol. B 26 1911
[10]	Kawai H 2008 Ph. D. Dissertation. (Cambridge: Massachusetts Institute of Technology)
[11]	Zheng S L, Song Y X, Sun X M 2013 Acta Phys. Sin. 62 108201 (in Chinese) [郑树琳, 宋亦旭, 孙晓民 2013 62 108201]
[12]	Li Q, Li D Z, Qian B N 2004 Acta Phys. Sin. 53 3477 (in Chinese) [李强, 李殿中, 钱百年 2004 53 3477]
[13]	Shan B W, Lin X, Wei L, Huang W D 2009 Acta Phys. Sin. 58 1132 (in Chinese) [单博炜, 林鑫, 魏雷, 黄卫东 2009 58 1132]
[14]	Shi Y F, Xu Q Y, Liu B C 2012 Acta Phys. Sin. 61 108101 (in Chinese) [石玉峰, 许庆彦, 柳百成 2012 61 108101]
[15]	Bentaleb K, Jetto K, Ez-Zahraouy H, Benyoussef A 2013 Chin. Phys. B 22 018902
[16]	Yue H, Shao C F, Chen X M, Hao H R 2008 Acta Phys. Sin. 57 6901 (in Chinese) [岳昊, 邵春福, 陈晓明, 郝合瑞 2008 57 6901]
[17]	Zhao H T, Mao H Y 2013 Acta Phys. Sin. 62 060501 (in Chinese) [赵韩涛, 毛宏燕 2013 62 060501]
[18]	Ren G, Lu L L, Wang W 2012 Acta Phys. Sin. 61 144501 (in Chinese) [任刚, 陆丽丽, 王炜 2012 61 144501]
[19]	Jin Z, Liu Q X, Mainul H 2007 Chin. Phys. 16 1267
[20]	Jin Z, Liu Q X 2006 Chin. Phys. 15 1248
[21]	Song Y R, Jiang G P, Xu J G 2011 Acta Phys. Sin. 60 120509 (in Chinese) [宋玉蓉, 蒋国平, 徐加刚 2011 60 120509]
[22]	Wang Y Q, Jiang G P 2011 Acta Phys. Sin. 60 080510 (in Chinese) [王亚奇, 蒋国平 2011 60 080510]
[23]	Ono K, Ohta H, Eriguchi K 2010 Thin Solid Films 518 3461
[24]	Chiaramonte L, Colombo R, Fazio G, Garozzo G, La Magna A 2012 Comp. Mater. Sci. 54 227
[25]	Du L Q, Li P, Liu J S 2008 Chin. J. Comput. 31 868 (in Chinese) [杜立群, 李璞, 刘军山 2008 计算机学报 31 868]
[26]	Zhou Z F, Huang Q A, Li W H, Lu W 2007 IEEE Trans. Comput. Aided Design Integr. Circuits Sys. 26 100
[27]	Chang J P, Arnold J C, Zau G C H, Shin H, Sawin H H 1997 J. Vac. Sci. Technol. A 15 1853
[28]	Fujimoto A, Tanaka T, Iwata K 1986 IEEE Comput. Graph. Appl. 6 16

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