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相比于传统的All-pass型微环谐振腔硅基电光调制器, Add-drop型微环谐振腔可提供更多的设计自由度, 使调制器在不改变杂质掺杂浓度的情况下就能在调制带宽和消光比性能上获得均衡考虑. 本文设计了基于Add-drop型微环谐振腔的高速、且在低调制电压下实现大消光比的硅基电光调制器, 所用微环谐振腔的半径仅仅为20 m. 重点分析了直波导与微环谐振腔的耦合对调制器性能的影响, 发现较小的Drop端耦合系数有利于消光比的提高, 但是不能同时达到最佳的调制带宽, 因此设计上存在一个带宽和消光比性能上的折中考虑. 根据优化设计的结果进行了实际器件的制作和测试. 静态光谱测试表明, 在3 V反向偏置电压的作用下, 调制器的消光比最大可达12 dB. 动态电光响应测试中, 在仅仅1.2 V的信号幅值电压下测得了8 Gbps数据传输速率的清晰眼图.Silicon electro-optical modulators based on add-drop micro-ring resonators have the advantage of more freedom in designing high-extinction-ratio and large-bandwidth modulators without changing the ion doping processes of the chip. Here we design a high-speed silicon modulator based on an add-drop micro-ring resonator with a radius of 20 m; it demonstrates high extinction ratio with low reverse bias. How the coupling between the straight waveguide and the ring resonator affects the performances is studied theoretically and it is found that a lower coupling coefficient at drop port leads to a higher extinction ratio but not the best bandwidth. Therefore, a balance should be considered between extinction ratio and bandwidth. According to the optimized result of the parameters the device is fabricated and tested. The spectrum testing indicates that the device can have 12 dB extinction ratio when it is operated at 3 V reverse bias. Furthermore, we have observed 8 Gbps open-eye diagram with only 1.2 V peak-to-peak signal voltage.
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Keywords:
- electrode-optical modulator /
- silicon on insulator /
- micro-ring resonator /
- free-carrier dispersion effect
[1] Wu Y P, Tao Y, Zhang J S, Wang Y G 2010 Acta Phys. Sin. 59 4395 (in Chinese) [吴懿平, 陶媛, 张金松, 王永国 2010 59 4395]
[2] Miller D 2009 Proceedings of the IEEE 97 1166
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[12] Huang Q Z 2009 Ph.D. Dissertation (Beijing Graduate School of Chinese Academy of Sciences) (in Chinese) [黄庆忠 2009 博士学位论文 (北京: 中国科学院研究生院)]
[13] Ren G H, Chen S W, Cao T T 2012 Acta Phys. Sin. 61 034215 (in Chinese) [任光辉, 陈少武, 曹彤彤 2012 61 034215]
[14] Liow T Y, Ang K W, Fang Q, Song J F, Xiong Y Z, Yu M B, Lo G Q, Kwong D L 2010 IEEE J. Sel. Top. Quantum Electron. 16 307
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[1] Wu Y P, Tao Y, Zhang J S, Wang Y G 2010 Acta Phys. Sin. 59 4395 (in Chinese) [吴懿平, 陶媛, 张金松, 王永国 2010 59 4395]
[2] Miller D 2009 Proceedings of the IEEE 97 1166
[3] Jalali B, Fathpour S 2006 IEEE J. Lightwave Technol. 24 4600
[4] Reed G T, Mashanovich G, Gardes F Y, Thomson D J 2010 Nat. Photon. 4 518
[5] Li Y M, Liu Z, Xue C L, Li C B, Cheng B W, Wang Q M 2013 Acta Phys. Sin. 62 114208 (in Chinese) [李亚明, 刘智, 薛春来, 李传波, 成步文, 王启明 2013 62 114208]
[6] Xu Q, Schmidt B, Pradhan S, Lipson M 2005 Nature 435 325
[7] Wang F, Qiu C, Xiao S M, Hao Y L, Jiang X Q, Wang M H, Yang J Y 2009 Chin. Phys. Lett. 26 104206
[8] Xu H, Xiao X, Li X Y, Hu Y T, Li Z Y, Chu T, Yu Y D, Yu J Z 2012 Opt. Express 20 15093
[9] Dong P, Liao S, Feng D, H. Liang, Zheng D, Shafiiha R, Kung C C, Qian W, Li G, Zheng X, Krishnamoorthy A V, Asghari M 2009 Opt. Express 17 22484
[10] Dong P, Liao S, Liang H, Qian W, Wang X, Shafiiha R, Feng D, Li G, Zheng X, Krishnamoorthy A V, Asghari M 2010 Opt. Lett. 35 3246
[11] Li G, Zheng X, Yao J, Thacker H, Shubin I, Luo Y, Raj K, Cunningham J E, Krishnamoorthy A V 2011 Opt. Express 19 20435
[12] Huang Q Z 2009 Ph.D. Dissertation (Beijing Graduate School of Chinese Academy of Sciences) (in Chinese) [黄庆忠 2009 博士学位论文 (北京: 中国科学院研究生院)]
[13] Ren G H, Chen S W, Cao T T 2012 Acta Phys. Sin. 61 034215 (in Chinese) [任光辉, 陈少武, 曹彤彤 2012 61 034215]
[14] Liow T Y, Ang K W, Fang Q, Song J F, Xiong Y Z, Yu M B, Lo G Q, Kwong D L 2010 IEEE J. Sel. Top. Quantum Electron. 16 307
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