超薄GaMnAs外延膜空穴浓度和应变弛豫研究

苏平; 龚敏; 马瑶; 高博; 石瑞英; 陈昶; 史同飞; 曹先存; 孟祥豪; 罗代升

doi:10.7498/aps.60.027105

摘要

稀磁GaMnAs外延膜中的Mn含量会影响外延膜的空穴浓度和应变弛豫.Raman散射研究表明,Mn含量为3%的超薄GaMnAs样品的空穴浓度大于2%样品,4%样品的空穴浓度小于3%样品.应变弛豫理论和高分辨X射线衍射研究表明,Mn含量为2%和3%的超薄GaMnAs外延层分别处于准共格或低弛豫状态,Mn含量为4%的GaMnAs外延层的弛豫度明显大于3%样品的弛豫度.我们认为,准共格或低弛豫度状态对空穴浓度随Mn含量的变化趋势几乎没有影响,较大弛豫度的应变状态将导致样品外延层产生较多缺陷,影响能带结构和能级,引起空穴浓度异常减小.

关键词:

Abstract

The hole concentration and strain relaxation degree in the diluted magnetic epitaxial film of GaMnAs are affected by the Mn concentration. The result from Raman scattering spectrum experiment has shown that the hole concentration in ultra-thin GaMnAs sample with Mn concentration of 3% is greater than that in sample with Mn concentration of 2% , while the hole concentration in sample with Mn concentration of 4% is less than that in sample with Mn concentration of 3%. Based on the theory of strain relaxation and investigation by HRXRD, it was indicated the samples with Mn concentration of 2% and 3% are in quasi-coherence or with low relaxation degree, respectively. On the other hand, the sample with Mn concentration of 4% obviously has a greater relaxation degree than that with 3% concentration. Therefore, it is suspected that the status of quasi-coherence or low relaxation degree hardly affects the hole concentration with the change of the Mn concentration. However, the strain relaxation status of large relaxation degree results in more defects in the epitaxial layer which affects the energy band and level thus decreases the hole concentration dramatically.

Keywords:

作者及机构信息

(1)成都理工大学油气藏地质及开发工程国家重点实验室,成都 610054; (2)四川大学电子信息学院,成都 610064; (3)四川大学物理科学与技术学院,微电子技术四川省重点实验室,成都 610064; (4)四川大学物理科学与技术学院,微电子技术四川省重点实验室,成都 610064;四川大学电子信息学院,成都 610064; (5)中国科学院固体物理所,合肥 230031

基金项目: 国家自然科学基金(批准号:60676052)资助的课题.

Authors and contacts

(1)Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China; (2)School of Electronic and Information Engineering, Sichuan University, Chengdu 610064, China; (3)School of Physical Science and Technology, Sichuan Province Key Laboratory of Microelectronics, Sichuan University, Chengdu 610064, China; (4)School of Physical Science and Technology, Sichuan Province Key Laboratory of Microelectronics, Sichuan University, Chengdu 610064, China;School of Electronic and Information Engineering, Sichuan University, Chengdu 610064, China; (5)State Key Laboratory of Oil and Gas Reservoir Geology and Exploitation, Chengdu University of Technology, Chengdu 610059, China

参考文献

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施引文献

[1]	Ohno H, Shen A, Matsukura F, Oiwa A, Endo A, Katsumoto S, Lye Y 1996 Appl. Phys. Lett. 69 363
[2]	Luo X D, Ji C J, Wang Y Q, Wang J N 2008 Acta Phys. Sin. 57 5277 (in Chinese) [罗向东、姬长建、王玉琦、王建农 2008 57 5277]
[3]	Yang W, Ji Y, Luo H H, Ruan X Z, Wang W Z, Zhao J H 2009 Acta Phys. Sin. 58 8560 (in Chinese) [杨威、姬扬、罗海辉、阮学忠、王玮竹、赵建华 2009 58 8560]
[4]	Gareev R R, Petukhov A, Schlapps M, Sadowski J, Wegscheider W 2010 Appl. Phys. Lett. 96 052114
[5]	Zhou R, Sun B Q, Ruan X Z, Gan H D, Ji Y, Wang W Z, Zhao J H 2008 Acta Phys. Sin. 57 5244 (in Chinese) [周蓉、孙宝权、阮学忠、甘华东、姬扬、王玮竹、赵建华 2008 57 5244]
[6]	Ohya S, Ohno K, Tanaka M 2007 Appl. Phys. Lett. 90 112503
[7]	Kuo C P, Vong S K, Cohen R M, Stringfellow G B 1985 J. Appl. Phys. 57 5428
[8]	Dunstan D J 1997 Journal of Materials Science:Materials in Electronics 8 337
[9]	Glunk M, Daeubler J, Dreher L, Schwaiger S, Schoch W, Sauer R, Limmer W, Brandlmaier A, Goennenwein S T B, Bihler C, Brandt M S 2009 Phys. Rev. B 79 195206
[10]	Sadowski J, Domagala J Z 2004 Phys. Rev. B 69 075206
[11]	Yoon I T, Kang T W 2009 Journal of Magnetism and Magnetic Materials 321 2257
[12]	Seong M J, Chun S H, Cheong H M, Samarth N, Mascarenhas A 2002 Phys. Rev. B 66 033202
[13]	Chen L, Yan S, Xu P F, Lu J, Wang W Z, Deng J J, Qian X, Ji Y, Zhao J H 2009 Appl. Phys. Lett. 95 182505
[14]	Xu Z J 2007 Detection and Analysis of Semiconductor (2nd ed) (Beijing:Science Press) pp51—54 (in Chinese) [许振嘉 2007 半导体的检测与分析(第二版)(北京:科学出版社)第51—54页]
[15]	Shioda R, Ando K, Hayashi T, Tanaka M 1998 Phys. Rev. B 58 1100
[16]	Guo X G, Chen X S, Sun Y L, Zhou X H, Sun L Z, Lu W 2004 Acta Phys. Sin. 53 1516 (in Chinese) [郭旭光、陈效双、孙沿林、周孝好、孙立忠、陆卫 2004 53 1516]
[17]	Liu X D, Wang W Z, Gao R X, Zhao J H, Wen J H, Lin W Z, Lai T S 2008 Acta Phys. Sin. 57 3857 (in Chinese) [刘晓东、王玮竹、高瑞鑫、赵建华、文锦辉、林位株、赖天树 2008 57 3857]
[18]	Lematre A, Miard A, Travers L, Mauguin O, Largeau L, Gourdon C, Jeudy V, Tran M, George J M 2008 Appl. Phys. Lett. 93 021123
[19]	Maek J, Kudrnovsky J, Máca F, Sinova J, MacDonald A H , Campion R P, Gallagher B L, Jungwirth T 2007 Phys. Rev. B 75 045202

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