硅掺杂铝镓氮薄膜场发射性能研究

王京; 王如志; 赵维; 陈建; 王波; 严辉

doi:10.7498/aps.62.017702

摘要

利用脉冲激光沉积, 分别制备了一系列不同Si掺杂浓度的铝镓氮(AlGaN)薄膜. 对此薄膜进行场致电子发射测试表明, Si掺杂浓度为1%的AlGaN薄膜具有最好的场发射特性. 相对于非掺杂样品, 其场发射电流明显增加, 场发射开启电场显著降低. 掺杂带来载流子浓度的提升, 为场发射提供足够的电子源, 使样品的场发射性能提升. 但掺杂浓度的进一步提高, 薄膜缺陷增加, 电子迁移率降低, 其薄膜内部电子输运能力降低大于电子浓度的增加对场电子发射的贡献, 导致场发射性能开始变差.

关键词:

铝镓氮 /
场发射 /
Si掺杂

Abstract

Aluminum gallium nitride (AlGaN) thin films are prepared by pulsed laser deposition with different silicon doping concentrations from 0.5% to 2%. The field emission measurement shows that the 1% Si-doped AlGaN film has the best field emission property. Compared with undoped film, the Si-doped film has a large emission current density and a low threshold field. The increase of doping concentration can increase the carrier concentration, which will add a number of supply electrons, thereby improving greatly the FE property of AlGaN film. With the doping concentration further increasing, the defect of film increases and the electron mobility reduces. The reduction of the internal supply electron is greater than the contribution of the increase of electrons concentration, which induces the field emission performance to deteriorate. This study will provide a reliable basis for designing high-performance field emission devices.

Keywords:

作者及机构信息

1.
北京工业大学材料科学与工程学院薄膜实验室, 北京 100124;

2.
中山大学测试中心, 广州 510275

基金项目: 国家自然科学基金(批准号: 11074017, 51072236)、北京市属市管高等学校人才强教计划(批准号: PHR201007101)、北京市科技新星计划(批准号: 2008B10)、北京市自然科学基金(批准号: 1102006)和北京工业大学基础研究基金资助的课题.

Authors and contacts

1.
Laboratory of Thin Film Materials, College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China;

2.
Instrumental Analysis of Research Center, Sun Yat-sen University, Guangzhou 510275, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11074017, 51072236), the Funding Project for Academic Human Resources Development in Institutions of Higher Learning Under the Jurisdiction of Beijing Municipality, China (Grant No. PHR201007101), the Beijing Nova Program, China (Grant No. 2008B10), the Beijing Natural Science Foundation, China (Grant No 1102006), and the Beijing University of Technology basic research Foundation, China.

参考文献

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[2]	Zhang X H, Gong L, Liu K, Cao Y Z, Xiao X, Sun W M, Hu X J, Gao Y H, Chen J, Zhou J, Wang Z L 2010 Adv. Mater. 22 5292
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[6]	You J B, Zhang X W, Cai P F, Dong J J, Gao Y, Yin Z G, Chen N F, Wang R Z, Yan H 2009 Appl. Phys. Lett. 94 2621051
[7]	Thapa R, Saha B, Chattopadhyay K K 2009 Appl. Surf. Sci. 255 4536
[8]	Xu L C, Wang R Z, Yan H 2012 J. Phys. Chem. C 116 1282
[9]	Song Z W, Wang R Z, Zhao W, Wang B, Yan H 2012 J. Phys. Chem. C 116 1780
[10]	Taniyasu Y, Kasu M, Toshiki M 2004 Appl. Phys. Lett. 84 2115
[11]	Jia L, Xie E Q, Pan X J, Zhang Z X 2009 Acta Phys. Sin. 58 3377 (in Chinese) [贾璐, 谢二庆, 潘孝军, 张振兴 2009 58 3377]
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[15]	Fursey G 2005 Field Emission in Vacuum Microelectronics (1st Ed.) (New York: Springer) p86
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[17]	Shi S C, Chen C F, Chattopadhyay S 2005 Appl. Phys. Lett. 87 073109
[18]	Wang R Z, Ding X M, Wang B, Xue K, Xu J B, Yan H, Hou X Y 2005 Phys. Rev. B 72 125310
[19]	Farid J S, Patil K R, Pillai V K 2010 J. Phys. Chem. C 114 3843
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施引文献

[1]	Yuan L Y, Tao Y T, Chen J, Dai J J, Song T, Ruan M Y, Ma Z W, Gong L, Liu K, Zhang X H, Hu X J, Zhou J, Wang Z L 2011 Adv. Funct. Mater. 21 2150
[2]	Zhang X H, Gong L, Liu K, Cao Y Z, Xiao X, Sun W M, Hu X J, Gao Y H, Chen J, Zhou J, Wang Z L 2010 Adv. Mater. 22 5292
[3]	Zhao W, Wang R Z, Song X M, Wang Hao, Wang B, Yan H, Chu P K 2010 Appl. Phys. Lett. 96 0921011
[4]	Yoder M N 1996 IEEE Trans. Electron Dev. 43 1633
[5]	Wang R Z, Wang B, Yan H 2009 Mater. China 28 306 (in Chinese) [王如志, 王波, 严辉 2009 中国材料进展 28 306]
[6]	You J B, Zhang X W, Cai P F, Dong J J, Gao Y, Yin Z G, Chen N F, Wang R Z, Yan H 2009 Appl. Phys. Lett. 94 2621051
[7]	Thapa R, Saha B, Chattopadhyay K K 2009 Appl. Surf. Sci. 255 4536
[8]	Xu L C, Wang R Z, Yan H 2012 J. Phys. Chem. C 116 1282
[9]	Song Z W, Wang R Z, Zhao W, Wang B, Yan H 2012 J. Phys. Chem. C 116 1780
[10]	Taniyasu Y, Kasu M, Toshiki M 2004 Appl. Phys. Lett. 84 2115
[11]	Jia L, Xie E Q, Pan X J, Zhang Z X 2009 Acta Phys. Sin. 58 3377 (in Chinese) [贾璐, 谢二庆, 潘孝军, 张振兴 2009 58 3377]
[12]	Fowler R H, Nordhein L W 1928 Proc. R. Soc. Lond. A 119 173
[13]	Xu C X, Sun X W, Chen B J 2004 Appl. Phys. Lett. 85 1540
[14]	Cutler P H, Miskovsky N M, Lerner P B, Chung M S 1999 Appl. Surf. Sci. 146 126
[15]	Fursey G 2005 Field Emission in Vacuum Microelectronics (1st Ed.) (New York: Springer) p86
[16]	Zhou Q G, Zhai J W, Yao X 2007 Acta Phys. Sin. 56 6667 (in Chinese) [周歧刚, 翟继卫, 姚熹 2007 56 6667]
[17]	Shi S C, Chen C F, Chattopadhyay S 2005 Appl. Phys. Lett. 87 073109
[18]	Wang R Z, Ding X M, Wang B, Xue K, Xu J B, Yan H, Hou X Y 2005 Phys. Rev. B 72 125310
[19]	Farid J S, Patil K R, Pillai V K 2010 J. Phys. Chem. C 114 3843
[20]	Li J J, Wu H H, Long B Y, L X Y, Hu C Q, Jin Z S 2005 Acta Phys. Sin. 54 1447 (in Chinese) [李俊杰, 吴汉华, 龙北玉, 吕宪义, 胡超权, 金曾孙 2005 54 1447]

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