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基于场匹配法的双排矩形栅慢波结构高频特性研究

刘青伦 王自成 刘濮鲲 董芳

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基于场匹配法的双排矩形栅慢波结构高频特性研究

刘青伦, 王自成, 刘濮鲲, 董芳

Analysis of high frequency characteristics of the double-grating rectangular waveguide slow-wave-structure based on the field match method

Liu Qing-Lun, Wang Zi-Cheng, Liu Pu-Kun, Dong Fang
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  • 本文运用场匹配法对具有任意位错的双排矩形栅慢波结构的场分布、 色散特性及耦合阻抗进行了研究. 研究结果表明, 场匹配法推导的色散特性与仿真软件CST和HFSS计算的结果完全一致, 耦合阻抗介于CST和HFSS之间. 在此基础上, 详细研究了上下两排系统之间位错对色散特性及耦合阻抗的影响. 当位错严格为半个周期时, 第一阻带消失, 第一个模式最高截止频率与第二个模式最低截止频率重叠, 发生简并; 当位错为0.45倍周期时, 在保证耦合阻抗不变的情况下, 基模的通带虽降低了2.8 GHz, 但阻带却增大了7.9 GHz, 从而可以有效避免简并及模式竞争的发生.
    A mode analysis is presented for the double-grating rectangular waveguide slow-wave structure (SWS) with arbitrary longitudinal displacements between the two gratings. By matching boundary conditions along the sides of the gratings, the distribution of electromagnetic field and high frequency characteristics of the SWS are studied. The simulation results show that the dispersion curve deduced from field equations is in good agreement with that simulated by software while the interaction impedance is higher than that calculated by HFSS, but lower than by CST. It also demonstrates that the longitudinal displacement between two gratings has a great effect on the first stop-band. The upper cutoff frequency of the first mode almost overlaps the lower cutoff frequency of the second mode when the displacement is set to be strictly half period, that is to say, the first stop-band disappears. To avoid the mode degeneracy and competition, the displacement is reduced to be about 0.45 times of period, so that with the interaction impedance kept unchanged, the stop-band increases about 7.9GHz, while the pass-band declines about 2.8 GHz.
    • 基金项目: 国家自然科学基金重点项目(批准号: 60931001)和国家自然科学基金(批准号: 61172016)资助的课题.
    • Funds: Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 60931001), and the National Natural Science Foundation of China (Grant No. 61172016).
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    Marshall E M, Phillips P M, Walsh J E 1988 IEEE Trans. Plasma Sci. 16 199

    [3]

    Bugaev S P, Cherepenin V A, Kanavets V I 1990 IEEE Trans. Plasma Sci. 18 518

    [4]

    Lin Y Y, Huang Y C 2007 Physical Review Special Topics-Accelerators and Beams 10 030701

    [5]

    McVey B D, Basten M A, Booske J H 1994 IEEE Transactions on Microwave Theory and Techniques 42 995

    [6]

    Mineo M, Paoloni C 2010 IEEE Trans. Electron Devices 57 1481

    [7]

    Mineo M, Paoloni C 2010 IEEE Trans. Electron Devices 57 3169

    [8]

    Sengele S, Jiang H, Booske J H 2009 IEEE Trans. Electron Devices 56 730

    [9]

    Shin Y M, Barnett L R, Luhmann N C 2008 Appl. Phys. Lett. 93 6951

    [10]

    Shin Y M, Barnett L R, Luhmann N C 2009 IEEE Trans. Electron Devices. 56 706

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    Shin Y M, Barnett L R 2008 Appl. Phys. Lett. 92 091501

    [12]

    Wang Z C, Lu D J, Wang L 2008 Journal of Electronics, Information Technology 30 2792 ( in Chinese) [王自成, 陆德坚, 王莉 2008 电子与信息学报 30 2792]

    [13]

    Zhu Y P 1997 Radar Ecm. 4 16 (in Chinese) [朱乙平 1997 雷达与对抗 4 16]

    [14]

    Joe J, Louis L J, Scharer J E July 1997 Phys. Plasmas 4 2707

    [15]

    Carlsten B E, DECEMBER 2002 Physics of Plasmas 9 5088

    [16]

    Liu S G, Li H F, Wang W X 1985 Introduction of Microwave Electronics (Beijing: National Defence Industry Press) P.104-106 [刘盛纲, 李宏福, 王文祥 1985 微波电子学导论 (北京: 国防工业出版社) 第104—106页]

    [17]

    Zhang K Q, Li D J 2001 Electromagnetic Theory for Microwaves and Optoelectronics (The Second Edition) (Beijing: Electronic Industry Press) p398-401 (in Chinese) [张克潜, 李德杰 2001 微波与光电子学中的电磁理论 (第二版) (北京: 电子工业出版社) 第398—401页]

  • [1]

    Collin R E 1966 Foundaations for Microwave Engineering(New York: McGraw-Hill) 383-388

    [2]

    Marshall E M, Phillips P M, Walsh J E 1988 IEEE Trans. Plasma Sci. 16 199

    [3]

    Bugaev S P, Cherepenin V A, Kanavets V I 1990 IEEE Trans. Plasma Sci. 18 518

    [4]

    Lin Y Y, Huang Y C 2007 Physical Review Special Topics-Accelerators and Beams 10 030701

    [5]

    McVey B D, Basten M A, Booske J H 1994 IEEE Transactions on Microwave Theory and Techniques 42 995

    [6]

    Mineo M, Paoloni C 2010 IEEE Trans. Electron Devices 57 1481

    [7]

    Mineo M, Paoloni C 2010 IEEE Trans. Electron Devices 57 3169

    [8]

    Sengele S, Jiang H, Booske J H 2009 IEEE Trans. Electron Devices 56 730

    [9]

    Shin Y M, Barnett L R, Luhmann N C 2008 Appl. Phys. Lett. 93 6951

    [10]

    Shin Y M, Barnett L R, Luhmann N C 2009 IEEE Trans. Electron Devices. 56 706

    [11]

    Shin Y M, Barnett L R 2008 Appl. Phys. Lett. 92 091501

    [12]

    Wang Z C, Lu D J, Wang L 2008 Journal of Electronics, Information Technology 30 2792 ( in Chinese) [王自成, 陆德坚, 王莉 2008 电子与信息学报 30 2792]

    [13]

    Zhu Y P 1997 Radar Ecm. 4 16 (in Chinese) [朱乙平 1997 雷达与对抗 4 16]

    [14]

    Joe J, Louis L J, Scharer J E July 1997 Phys. Plasmas 4 2707

    [15]

    Carlsten B E, DECEMBER 2002 Physics of Plasmas 9 5088

    [16]

    Liu S G, Li H F, Wang W X 1985 Introduction of Microwave Electronics (Beijing: National Defence Industry Press) P.104-106 [刘盛纲, 李宏福, 王文祥 1985 微波电子学导论 (北京: 国防工业出版社) 第104—106页]

    [17]

    Zhang K Q, Li D J 2001 Electromagnetic Theory for Microwaves and Optoelectronics (The Second Edition) (Beijing: Electronic Industry Press) p398-401 (in Chinese) [张克潜, 李德杰 2001 微波与光电子学中的电磁理论 (第二版) (北京: 电子工业出版社) 第398—401页]

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出版历程
  • 收稿日期:  2012-05-12
  • 修回日期:  2012-06-01
  • 刊出日期:  2012-12-05

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