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用第一性原理方法研究了在微观尺度具有三重对称磁结构的IrMn合金的反铁磁自旋阀(AFSV)的电子输运.研究表明:基于有序L12相IrMn合金的Co/Cu/IrMn自旋阀的巨磁电阻(GMR)效应具有三重对称性,可以利用这一特性区分反铁磁材料的GMR与传统铁磁材料的GMR.基于无序相IrMn合金的IrMn(0.84 nm)/Cu(0.42 nm)/IrMn(0.42 nm)/Cu(0.42 nm)(111) AFSV的电流平行平面构型的GMR约为7.7％,大约是电流垂直平面构型的GMR(3.4％)的两倍,明显大于实验中观测到的基于共线磁结构的FeMn基AFSV的GMR.According to the parameter-free first principles calculations, we investigate the spin polarized transport in antiferromagnetic spin valve (AFSV) based on noncollinear IrMn. The giant magnetoresistance (GMR) in Co/IrMn/Cu(111) with L12-type IrMn shows three-fold rotational symmetry, which is easy to be distinguished from the GMR of normal ferromagnetic spin valves. Moreover, GMR based on -phase IrMn with current-in-plane (CIP) structure shows that GMR is 7.7%, around two time larger than that in current-pendicular-to-plane (CPP) structure (3.4%). Our study demonstrates that the AFSV CIP structure possesses a larger GMR effect than the CPP structure, and the GMR effect in AFSV based on noncollinear antiferromagnetic structure is larger than that based on collinear antiferromagnetic structure such as FeMn.
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Keywords:
- antiferromagnetic spin valve /
- giant magnetoresistance effect /
- noncollinear magnetic structure /
- current in plane
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[41] -
[1] Parkin S S 1991 Phys. Rev. Lett. 67 3598
[2] Slonczewski J C 1996 J. Magn. Magn. Mater. 159 L1
[3] [4] Berger L 1996 Phys. Rev. B 54 9353
[5] [6] Kubetzka A, Bode M, Pietzsch O, Wiesendanger R 2002 Phys. Rev. Lett. 88 057201
[7] [8] [9] Meiklejohn W H, Bean C P 1956 Phys. Rev. 102 1413
[10] [11] Nunez A S, Duine R A, Haney P, MacDonald A H 2006 Phys. Rev. B 73 214426
[12] [13] Xu Y, Wang S, Xia K 2007 Phys. Rev. Lett. 100 6602
[14] [15] Wei Z, Sharma A, Bass J, Tsoi M 2009 J. Appl. Phys. 105 07D113
[16] Sakuma A, Fukamichi K, Sasao K, Umetsu R Y 2003 Phys. Rev. B 67 024420
[17] [18] [19] Vitos L, Skriver H L, Johansson B, Kollar J 2000 Comput. Mater. Sci. 18 24
[20] [21] Vitos L 2001 Phys. Rev. B 64 014107
[22] [23] Pourovskii L V, Ruban A V, Vitos L, Ebert H, Johansson B, Abrikosov I A 2005 Phys. Rev. B 71 094415
[24] Andersen O K, Jepsen O, Krier G 1994 Lecture on Methods of Electronic Structure Calculations (Singapore: World Scientific) p63
[25] [26] Vosko S H, Wilk L, Nusair M 1980 Can. J. Phys. 58 1200
[27] [28] Ruban A V, Simak S I, Korzhavyi P A, Skriver H L 2002 Phys. Rev. B 66 024202
[29] [30] Datta S 1995 Electronic Transport in Mesoscopic Systems (Cambridge: Cambridge University Press) p1
[31] [32] [33] Xia K, Zwierzycki M, Talanana M, Kelly P J, Bauer G E W 2006 Phys. Rev. B 73 064420
[34] Schep K M, van Hoof J B A N, Kelly P J, Bauer G E W, Inglesfield J E 1997 Phys. Rev. B 56 10805
[35] [36] [37] Wang L, Wang S G, Rizwan S, Qin Q H, Han X F 2009 Appl. Phys. Lett. 95 152512
[38] [39] Gokemeijer N J, Ambrose T, Chie C L 1997 Phys. Rev. Lett. 79 4270
[40] Cai J W, Lai W Y, Teng J, Shen F, Zhang Z, Mei L M 2004 Phys. Rev. B 70 214428
[41]
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