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Based on thermal deformation of bi-material microcantilever, the focal plane array (FPA)of uncooled optical readout infrared(IR) imaging system has undergone a development from substrate array to substrate-free array. The experimental imaging result and finite element method (FEM) analysis indicated that the substrate-free focal plane array (FPA) did not accord with the condition of constant frame temperature. This paper proposed a new theoretical model on thermal transmission of substrate-free FPA with electrical analogy method. Considering the system as a whole, the analysis of complex thermal interaction of adjacent elements could be averted while the heat absorption and transmission of frame could be considered. The temperature of outer frame was set to be equal to the ambient temperature as a boundary condition. Although it was not so flexible compared with FEM analysis when dealing with the boundary condition, the theoretical model was proved to correspond with the experimental result, and could be used as an approximate formula in thermal response calculation of substrate-free FPA. The model avoids the complication of FEM analysis, especially for large arrays. Further more, the model can be used for substrate-free FPA dimensions design and optimization under certain response target.
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Keywords:
- optical readout /
- substrate-free /
- uncooled infrared imaging /
- focal plane array
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[2] Chen C H, Yi X J, Xiong B F 2001 Acta.Phys.Sin. 50 450(in Chinese) [陈长虹、易新建、熊笔锋 2001 50 450]
[3] Mao M, Perazzo T, Kwon O, Majumdar A, Varesi J, Norton P 1999 Proc.IEEE MEMS 100
[4] Ishizuya T, Suzuki J, Akagawa K, Kazama T 2001 J.Institute of Image Information and Television Engineers 55 304
[5] Ishizuya T,Suzuki J, Akagawa K, Kazama T 2002 Proc.IEEE MEMS 578
[6] Zhao Y, Mao M, Horowitz R,Majumdar A,Varesi J,Norton P, Kitching J 2002 J.MEMS 11 136
[7] Senesaca L R, Corbeil J L,Rajic S,Kazama T 2003 Ultramicroscopy 97 451
[8] Dong F L, Zhang Q C, Chen D P, Pan L, Guo Z Y, Wang W B, Duan Z H, Wu X P 2006 Sensors and Actuators A 133 236
[9] Shi S L, Chen D P, Li C B, Jiao B B, Ou Y, Jing Y P, Ye T C, Guo Z Y, Zhang Q C, Wu X P 2007 Meas.Sci.Technol 18 1321
[10] Miao Z Y, Zhang Q C, Guo Z Y, Wu X P, Chen D P 2007 Opt. Lett. 32 594
[11] Xiong Z M, Zhang Q C, Gao J, Wu X P, Chen D P, Jiao B B 2007 J. Appl. Phys. 102 113524
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[14] Dong F L, Jiao B B, Zhang Q C, Chen D P, Miao Z Y, Xiong Z M 2007 Experimental Mechanics 22 401 (in Chinese)[董凤良、焦斌斌、张青川、陈大鹏、缪正宇、熊志铭 2007 实验力学 22 401]
[15] Cheng T, Zhang Q C, Chen D P, Wu X P, Shi H T, Gao J 2009 Acta.Phys.Sin. 58 852 (in Chinese) [程 腾、张青川、陈大鹏、伍小平、史海涛、高 杰 2009 58 852]
[16] Cheng T, Zhang Q C, Chen D P, Shi H T, Gao J, Qian J, Wu X P 2010 Chin.Phys.B 19 010701
[17] Miao Z Y, Zhang Q C, Chen D P, Wu X P, Li C B, Guo Z Y, Dong F L, Xiong Z M 2006 Acta.Phys.Sin. 55 3208 (in Chinese)[缪正宇、张青川、陈大鹏、伍小平、李超波、郭哲颖、董凤良、熊志铭 2006 55 3208]
[18] Guo Z Y, Zhang Q C, Cheng D P, Wu X P, Dong F L, Miao Z Y, Xiong Z M, Li C B 2006 Experimental Mechanics 20 213 (in Chinese )[郭哲颖、张青川、陈大鹏、伍小平、董凤良、缪正宇、熊志铭、李超波 2005 实验力学 20 213]
[19] Zhang Q C, Miao Z Y, Guo Z Y, Dong F L, Xiong Z M, Wu X P, Chen D P, Li C B, Jiao B B 2007 Optoelectron.Lett. 3 119
[20] Kruse P W 1997 Semiconductors and Semimetals 47 17
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[1] Rogalski A 2003 Prog.Quant.Electron 27 59
[2] Chen C H, Yi X J, Xiong B F 2001 Acta.Phys.Sin. 50 450(in Chinese) [陈长虹、易新建、熊笔锋 2001 50 450]
[3] Mao M, Perazzo T, Kwon O, Majumdar A, Varesi J, Norton P 1999 Proc.IEEE MEMS 100
[4] Ishizuya T, Suzuki J, Akagawa K, Kazama T 2001 J.Institute of Image Information and Television Engineers 55 304
[5] Ishizuya T,Suzuki J, Akagawa K, Kazama T 2002 Proc.IEEE MEMS 578
[6] Zhao Y, Mao M, Horowitz R,Majumdar A,Varesi J,Norton P, Kitching J 2002 J.MEMS 11 136
[7] Senesaca L R, Corbeil J L,Rajic S,Kazama T 2003 Ultramicroscopy 97 451
[8] Dong F L, Zhang Q C, Chen D P, Pan L, Guo Z Y, Wang W B, Duan Z H, Wu X P 2006 Sensors and Actuators A 133 236
[9] Shi S L, Chen D P, Li C B, Jiao B B, Ou Y, Jing Y P, Ye T C, Guo Z Y, Zhang Q C, Wu X P 2007 Meas.Sci.Technol 18 1321
[10] Miao Z Y, Zhang Q C, Guo Z Y, Wu X P, Chen D P 2007 Opt. Lett. 32 594
[11] Xiong Z M, Zhang Q C, Gao J, Wu X P, Chen D P, Jiao B B 2007 J. Appl. Phys. 102 113524
[12] Pan L, Zhang Q C, Wu X P, Duan Z H, Chen D P, Wang W B, Guo Z Y 2004 Experimental Mechanics 19 403 (in Chinese)[潘 亮、张青川、伍小平、段志辉、陈大鹏、王玮冰 2004 实验力学 19 403]
[13] Xiong Z M, Zhang Q C,Chen D P,Wu X P, Guo Z Y, Dong F L, Miao Z Y, Li C B 2007 Acta.Phys.Sin. 56 2529 (in Chinese) [熊志铭、张青川、陈大鹏、伍小平、郭哲颖、董凤良、缪正宇、李超波 2007 56 2529]
[14] Dong F L, Jiao B B, Zhang Q C, Chen D P, Miao Z Y, Xiong Z M 2007 Experimental Mechanics 22 401 (in Chinese)[董凤良、焦斌斌、张青川、陈大鹏、缪正宇、熊志铭 2007 实验力学 22 401]
[15] Cheng T, Zhang Q C, Chen D P, Wu X P, Shi H T, Gao J 2009 Acta.Phys.Sin. 58 852 (in Chinese) [程 腾、张青川、陈大鹏、伍小平、史海涛、高 杰 2009 58 852]
[16] Cheng T, Zhang Q C, Chen D P, Shi H T, Gao J, Qian J, Wu X P 2010 Chin.Phys.B 19 010701
[17] Miao Z Y, Zhang Q C, Chen D P, Wu X P, Li C B, Guo Z Y, Dong F L, Xiong Z M 2006 Acta.Phys.Sin. 55 3208 (in Chinese)[缪正宇、张青川、陈大鹏、伍小平、李超波、郭哲颖、董凤良、熊志铭 2006 55 3208]
[18] Guo Z Y, Zhang Q C, Cheng D P, Wu X P, Dong F L, Miao Z Y, Xiong Z M, Li C B 2006 Experimental Mechanics 20 213 (in Chinese )[郭哲颖、张青川、陈大鹏、伍小平、董凤良、缪正宇、熊志铭、李超波 2005 实验力学 20 213]
[19] Zhang Q C, Miao Z Y, Guo Z Y, Dong F L, Xiong Z M, Wu X P, Chen D P, Li C B, Jiao B B 2007 Optoelectron.Lett. 3 119
[20] Kruse P W 1997 Semiconductors and Semimetals 47 17
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