横向偏置场作用的非晶带巨磁阻抗效应理论

鲍丙豪; 任乃飞; 骆英

doi:10.7498/aps.60.037503

摘要

采用多畴结构模型,考虑非晶带具有180°畴壁的磁畴及其两面的偏置磁场方向的不同,根据自由能最小原理,Maxwell方程组及带阻尼项的Landau-Lifshitz方程,建立了非晶态合金带在横向偏置磁场作用下的巨磁阻抗效应的理论计算公式. 提出并采用四状态平均磁导率代替单畴模型获得的磁导率,得到了更符合实际的处于偏置场作用的阻抗随外磁场变化的理论结果.

关键词:

Taking into account the amorphous alloy ribbon with the 180°magnetic domain walls and transverse bias magnetic field, and adopting multi-domain structure model, the theory of giant magneto-impedance (GMI) effect was found by minimizing the total free energy and by the solution of the Maxwell’s equations combining with Landau-Lifshitz equation. A new four-state method is proposed to calculate the average magnetic permeability of four states of the amorphous materials, which is used to replace the permeability obtained based on the single domain model. The method has an advantage in explaining the GMI effect over the theory established by single domain model.

Keywords:

作者及机构信息

(1)江苏大学机械工程学院,镇江 212013; (2)江苏大学理学院,镇江 212013

基金项目: 安徽省自然科学基金(批准号:01042309),国家自然科学基金(批准号:50575100)和江苏大学高级人才专项基金(批准号:03JDG-012)资助的课题.

Authors and contacts

(1)School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, China; (2)School of Science, Jiangsu University, Zhenjiang 212013, China

参考文献

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[2]	Panina L V, Mohri K 1994 Appl. Phys. Lett. 65 1189
[3]	Correa M A, Viegas A D C, Silva R B, Andrade A M H, Sommer R L 2007 J. Appl. Phys. 101 043905
[4]	Jantaratana P, Bebenin N G, Kurlyandskaya G V 2009 J. Appl. Phys. 105 013908
[5]	Pan H L, Cheng J K, Zhao Z J, He J K, Ruan J Z, Yang X L, Yuan W Z 2008 Acta. Phys. Sin. 57 3230 (in Chinese)[潘海林、程金科、赵振杰、何家康、阮建中、扬燮龙、袁望治 2008 57 3230]
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[9]	Yang Q M, Xu Q M,Fang Y Z,Mo C J 2009 Acta. Phys. Sin. 58 4072 (in Chinese)[杨全民、许启明、方允樟、莫婵娟 2009 58 4072 ]
[10]	Pan H, Li G, Wang Z J 2008 Acta. Phys. Sin. 57 7194(in Chinese)[庞浩、李根、王赞基 2008 57 7194]
[11]	Zhang S L, Sun J F, Xing D W2010 Acta. Phys. Sin. 59 2068(in Chinese)[张树玲、孙剑飞、刑大伟 2010 59 2068]
[12]	Kurlyandskaya G V, Fal V, Saad A, Asua E, Rodriguez J 2007 J. Appl. Phys. 101 054505
[13]	Alves F,Rached L A,Moutoussamy,Coillot C 2008 Sensors and Actuators A 142 459
[14]	Han B, Zhang T, Zhang K, Yao B, Yue X L, Huang D Y, Ren H, Tang X Y 2008 IEEE Trans. Magn. 44 605
[15]	Leroy P,Coillot C,Mosser V,Roux A,Chanteur G 2008 Sensors and Actuators A 142 503
[16]	Kraus L 1999 J. Magn. Magn. Mater. 196-197 354
[17]	Bao B H, Song X F, Ren N F, Li C S 2006 Acta. Phys. Sin. 55 3698 (in Chinese)[鲍丙豪、宋雪丰、任乃飞、李长生 2006 55 3698]
[18]	Antonov A S, Iakubov I T,Lagarkov A N 1998 J. Magn. Magn. Mater. 187 252
[19]	Makhnovskiy D P, Panina L V, Mapps D J 2001 Phys. Rev. B 63 144424
[20]	Buznikov N A, Antonov A S, Kim C G 2005 J. Magn. Magn. Mater. 285 101
[21]	Zhong Z Y, Lan Z W, Zhang H W, Liu Y L, Wang H C 2001 Acta. Phys. Sin. 50 1610 (in Chinese) [钟志勇、兰中文、张怀武、刘颖力、王豪才 2001 50 1610]
[22]	Panina L V, Mohri K, Uchiyama T, Noda M 1995 IEEE Trans. Magn. 31 1429
[23]	Hendrych A, Zivotsky O, Postava K, Pistora J, Kraus L, Kubinek R 2009 J. Magn. Magn. Mater. 321 3771

施引文献

[1]	Panina L V, Mohri K, Bushida K, Noda M 1994 J. Appl. Phys. 76 6198
[2]	Panina L V, Mohri K 1994 Appl. Phys. Lett. 65 1189
[3]	Correa M A, Viegas A D C, Silva R B, Andrade A M H, Sommer R L 2007 J. Appl. Phys. 101 043905
[4]	Jantaratana P, Bebenin N G, Kurlyandskaya G V 2009 J. Appl. Phys. 105 013908
[5]	Pan H L, Cheng J K, Zhao Z J, He J K, Ruan J Z, Yang X L, Yuan W Z 2008 Acta. Phys. Sin. 57 3230 (in Chinese)[潘海林、程金科、赵振杰、何家康、阮建中、扬燮龙、袁望治 2008 57 3230]
[6]	Correa M A,Bohn F,Viegas A D C, Carara M A, Schelp L F, Sommer R L 2008 J. Magn. Magn. Mater. 320 25
[7]	Yoon S S, Lee B S, Rheem Y W, Ahn S J, Kim C G, Kim C O 2003 IEEE Trans. Magn. 39 3292
[8]	Garcia C, Chizhik A, Zhukov A, Zhukova V, Gonzalez J, Blanco J M, Panina L V 2007 J. Magn. Magn. Mater. 316 896
[9]	Yang Q M, Xu Q M,Fang Y Z,Mo C J 2009 Acta. Phys. Sin. 58 4072 (in Chinese)[杨全民、许启明、方允樟、莫婵娟 2009 58 4072 ]
[10]	Pan H, Li G, Wang Z J 2008 Acta. Phys. Sin. 57 7194(in Chinese)[庞浩、李根、王赞基 2008 57 7194]
[11]	Zhang S L, Sun J F, Xing D W2010 Acta. Phys. Sin. 59 2068(in Chinese)[张树玲、孙剑飞、刑大伟 2010 59 2068]
[12]	Kurlyandskaya G V, Fal V, Saad A, Asua E, Rodriguez J 2007 J. Appl. Phys. 101 054505
[13]	Alves F,Rached L A,Moutoussamy,Coillot C 2008 Sensors and Actuators A 142 459
[14]	Han B, Zhang T, Zhang K, Yao B, Yue X L, Huang D Y, Ren H, Tang X Y 2008 IEEE Trans. Magn. 44 605
[15]	Leroy P,Coillot C,Mosser V,Roux A,Chanteur G 2008 Sensors and Actuators A 142 503
[16]	Kraus L 1999 J. Magn. Magn. Mater. 196-197 354
[17]	Bao B H, Song X F, Ren N F, Li C S 2006 Acta. Phys. Sin. 55 3698 (in Chinese)[鲍丙豪、宋雪丰、任乃飞、李长生 2006 55 3698]
[18]	Antonov A S, Iakubov I T,Lagarkov A N 1998 J. Magn. Magn. Mater. 187 252
[19]	Makhnovskiy D P, Panina L V, Mapps D J 2001 Phys. Rev. B 63 144424
[20]	Buznikov N A, Antonov A S, Kim C G 2005 J. Magn. Magn. Mater. 285 101
[21]	Zhong Z Y, Lan Z W, Zhang H W, Liu Y L, Wang H C 2001 Acta. Phys. Sin. 50 1610 (in Chinese) [钟志勇、兰中文、张怀武、刘颖力、王豪才 2001 50 1610]
[22]	Panina L V, Mohri K, Uchiyama T, Noda M 1995 IEEE Trans. Magn. 31 1429
[23]	Hendrych A, Zivotsky O, Postava K, Pistora J, Kraus L, Kubinek R 2009 J. Magn. Magn. Mater. 321 3771

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