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We report on a kind of all-proton spin quantum gate realized by fabric silicon cantilever in a semiconductor spin magnetic resonance microscopy system. In the paper, the Rf pulse sequence control and the spin rotate frame system are adopted according to spin-lattice and spin-spin relaxation times,and the small resonance force, the sensitivity and the spin density matrix are studied. The results show that all-proton spin quantum gates have high Q controlling and detecting sensitivity, and gain the effective force oscillating through the resonance slice and fiber interferometer. The system has advantages of MRI and AFM characteristics. In addition, the calculation indicates that it is powerful tool of magnetic resonance force technology and useful way to achieve quantum computation and quantum information.
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Keywords:
- spatial resolution /
- resonance microscopy /
- semiconductor photo etching /
- EBL fabric
[1] Balatsky A V, Fransson J, Mozyrsky D, Manassen Y 2006 Physical Review B 73 184429
[2] Stipe B C, Mamin H J, Stowe T D, Kenny T W 2001 Physical Review Letters 86 2874
[3] Shih H C, William M, Dougherty, Garbini J L, Sidles J A 2004 Review of Scientific Instruments 75 1175
[4] Zhang Y Q, Zhang S 2009 Chin. Phys. B 18 4683
[5] Shao XQ, Wang HF, Chen L 2009 Optics Communications 282 4643
[6] Monz T, Kim K, Villar AS 2006 Physical Review Letters 103 13
[7] Shao X Q, Wang H F, Chen L, Zhang S, Yeon K H 2009 Physics Letters A 374 28
[8] Liu Y S, Liang L M 2009 Chinese Physics Letters 26 100306
[9] Sleator T, Weinfurter H 1995 Physical. Review Letters 74 4087
[10] Shao X Q, Chen L, Zhang S 2009 Chin. Phys. B 18 3258
[11] Zheng S B 2009 Chin. Phys. B 18 3453
[12] Lin L H 2009 Chin. Phys. B 18 1867
[13] Shao X Q, Chen L, Zhang S 2009 Chin. Phys. B 18 440
[14] Ghasemi A, Liu XX, Morisako A, Dougherty 2009 IEEE Transactions on Magnetics 45 4420
[15] Gao X Y, Han N, Zhang X X 2009 Journal of materials science 44 5877
[16] Liu Y M, Yu Z Y, Yang H B, Huang Y Z, 2006 Acta Phys. Sin. 55 5023 (in Chinese)[刘玉敏、 俞重远、 杨红波、 黄永箴 2006 55 5023]
[17] Liu Y M, Yu Z Y, Ren X M 2009 Acta Phys. Sin. 58 66 (in Chinese)[刘玉敏、 俞重远、 杨红波、 黄永箴 2009 58 66]
[18] Habib B, Shayegan M, Winkler R 2009 Semiconductor Science and Technology 24 064002
[19] Tang YX, Lin XM, Lin GW 2008 Chin. Phys. B 17 4388
[20] Sleator T, Weinfurter H 1995 Physical Review Letters 74 4087
[21] Tang SQ, Zhang DY, Xie LJ 2009 Chin. Phys. B 18 56
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[1] Balatsky A V, Fransson J, Mozyrsky D, Manassen Y 2006 Physical Review B 73 184429
[2] Stipe B C, Mamin H J, Stowe T D, Kenny T W 2001 Physical Review Letters 86 2874
[3] Shih H C, William M, Dougherty, Garbini J L, Sidles J A 2004 Review of Scientific Instruments 75 1175
[4] Zhang Y Q, Zhang S 2009 Chin. Phys. B 18 4683
[5] Shao XQ, Wang HF, Chen L 2009 Optics Communications 282 4643
[6] Monz T, Kim K, Villar AS 2006 Physical Review Letters 103 13
[7] Shao X Q, Wang H F, Chen L, Zhang S, Yeon K H 2009 Physics Letters A 374 28
[8] Liu Y S, Liang L M 2009 Chinese Physics Letters 26 100306
[9] Sleator T, Weinfurter H 1995 Physical. Review Letters 74 4087
[10] Shao X Q, Chen L, Zhang S 2009 Chin. Phys. B 18 3258
[11] Zheng S B 2009 Chin. Phys. B 18 3453
[12] Lin L H 2009 Chin. Phys. B 18 1867
[13] Shao X Q, Chen L, Zhang S 2009 Chin. Phys. B 18 440
[14] Ghasemi A, Liu XX, Morisako A, Dougherty 2009 IEEE Transactions on Magnetics 45 4420
[15] Gao X Y, Han N, Zhang X X 2009 Journal of materials science 44 5877
[16] Liu Y M, Yu Z Y, Yang H B, Huang Y Z, 2006 Acta Phys. Sin. 55 5023 (in Chinese)[刘玉敏、 俞重远、 杨红波、 黄永箴 2006 55 5023]
[17] Liu Y M, Yu Z Y, Ren X M 2009 Acta Phys. Sin. 58 66 (in Chinese)[刘玉敏、 俞重远、 杨红波、 黄永箴 2009 58 66]
[18] Habib B, Shayegan M, Winkler R 2009 Semiconductor Science and Technology 24 064002
[19] Tang YX, Lin XM, Lin GW 2008 Chin. Phys. B 17 4388
[20] Sleator T, Weinfurter H 1995 Physical Review Letters 74 4087
[21] Tang SQ, Zhang DY, Xie LJ 2009 Chin. Phys. B 18 56
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