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本文论证,单连通的二维电子体系,在低温、强磁场等条件下,其两端电阻精确地等于量子化霍耳电阻h/fe2,f为Landau填充因数。并以此为基础,解释了复连通二维电子系统的电阻量子化。We explain the quantized magnetoresistance in multiply connected perimeters in two-dimensional systems observed by Fang and Stiles based in terms of a model which states that the two-terminal resistance of a two-dimensional electron system in a quantizing magnetic field in any open geometry is given by h/fe2, where f is the Landau filling factor.
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