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Magnetic proximity effects (MPE) are crucial for topological quantum devices because they enable control of boundary states between a ferromagnetic insulator and a topological insulator. The InAs/GaInSb double quantum well system—especially when combined with a superconductor and influenced by MPE—shows promise for producing topological qubits. Nonetheless, researchers still debate the exact strength of the MPE between europium sulfide (EuS) and InAs.
To directly probe the MPE, this work focuses on a EuS/InAs/GaInSb heterostructure. The heterostructure was fabricated by depositing EuS onto the passivated surface of a Hall bar formed from an InAs/GaInSb double quantum well, utilizing an electron beam evaporation system. Structural analysis using Reflection High-Energy Electron Diffraction and magnetic measurements revealed that, although the resulting EuS thin films were polycrystalline, they nonetheless displayed desired magnetic properties, making them suitable for further study of MPE phenomena.
Low-temperature magnetoresistance measurements on the fabricated Hall bar revealed several key phenomena that collectively provide evidence for the MPE. Application of a positive gate voltage caused the electron wavefunction within the InAs layer to shift toward the EuS interface, thereby enhancing the MPE. Under a perpendicular magnetic field, the magnetoresistance exhibited an increasing slope for the odd-parity component. Additionally, a transition from positive to negative magnetoresistance near zero field was observed. When an in-plane magnetic field was applied, a gate-enhanced negative magnetoresistance emerged. Hysteretic magnetoresistance, corresponding to the reversal of EuS magnetization, was also detected during these measurements.
The resistance-temperature curve for the heterostructure displayed a pronounced upturn at low temperatures. This behavior was well described by the Kondo model, indicating the presence of exchange coupling between InAs electrons and the localized magnetic moments of EuS near the interface. Such coupling is a strong indicator of the magnetic proximity effect at work in the system.
These findings collectively demonstrate the existence of a gate-tunable MPE in the EuS/InAs/GaInSb heterostructure. The ability to control the MPE through gate voltage establishes this heterostructure as a compelling platform for the exploration of proximity-induced magnetism. Furthermore, these results underscore the potential applications of such systems in the development of spin-based electronic devices and highlight their significance for future research in topological quantum computing.-
Keywords:
- ferromagnetic insulator/semiconductor heterostructure /
- topological insulator /
- magnetoresistance /
- spintronics
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