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中国物理学会期刊
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DUAN Baoxing, LI Yuying, TANG Chunping, REN Yuhao, YANG Yintang. Novel bulk silicon lateral insulated gate bipolar transistor with low hole substrate currentJ. Acta Physica Sinica, 2026, 75(5): 050805. DOI: 10.7498/aps.75.20251354
Citation: DUAN Baoxing, LI Yuying, TANG Chunping, REN Yuhao, YANG Yintang. Novel bulk silicon lateral insulated gate bipolar transistor with low hole substrate currentJ. Acta Physica Sinica, 2026, 75(5): 050805. DOI: 10.7498/aps.75.20251354
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Novel bulk silicon lateral insulated gate bipolar transistor with low hole substrate current

Acta Phys. Sin., 2026, 75(5): 050805.
DOI: 10.7498/aps.75.20251354
CSTR: 32037.14.aps.75.20251354
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