Forward transport, degradation, and breakdown of hydrogen-ion-implanted GaN high electron mobility transistor gate

ZHANG Dongkai; HU Qing; GUO Yulong; ZHAI Ying; LIU Xushan; WANG Zixu; YU Guohao; YAN Dawei

doi:10.7498/aps.75.20251343

Search

x

ZHANG Dongkai, HU Qing, GUO Yulong, ZHAI Ying, LIU Xushan, WANG Zixu, YU Guohao, YAN Dawei. Forward transport, degradation, and breakdown of hydrogen-ion-implanted GaN high electron mobility transistor gateJ. Acta Physica Sinica, 2026, 75(5): 050705. DOI: 10.7498/aps.75.20251343

Citation:

ZHANG Dongkai, HU Qing, GUO Yulong, ZHAI Ying, LIU Xushan, WANG Zixu, YU Guohao, YAN Dawei. Forward transport, degradation, and breakdown of hydrogen-ion-implanted GaN high electron mobility transistor gateJ. Acta Physica Sinica, 2026, 75(5): 050705. DOI: 10.7498/aps.75.20251343

Citation:

ZHANG Dongkai, HU Qing, GUO Yulong, ZHAI Ying, LIU Xushan, WANG Zixu, YU Guohao, YAN Dawei. Forward transport, degradation, and breakdown of hydrogen-ion-implanted GaN high electron mobility transistor gateJ. Acta Physica Sinica, 2026, 75(5): 050705. DOI: 10.7498/aps.75.20251343