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Based on the Atmospheric Neutron Irradiation Spectrometer (ANIS) at the China Spallation Neutron Source (CSNS), this paper conducts an experimental study on the atmospheric neutron single-event effects in 128-layer charge trapping (CT) 3D NAND flash memory. By integrating irradiation experiments, reverse analysis, and Monte Carlo neutron transport simulations, this research aims to investigate the impact of atmospheric neutron irradiation on the multiple-cell upset (MCU) susceptibility of CT 3D NAND flash memory and analyze the underlying mechanisms, including the distribution of secondary particles within the sensitive volume and the characteristics of deposited charge.
The results indicate that under broad-spectrum neutron irradiation, the primary failure modes in CT 3D NAND flash memory are single-bit upsets (SBU) and MCU, with SBU accounting for 82.55% of the total events. By constructing a three-dimensional spatial distribution map of single-event upset (SEU), it was observed that, compared to the dense "string-like" distribution formed by 78Kr ion irradiation (LET=11.4MeV·cm2·mg-1), neutron-induced SEU exhibit a significantly more random spatial distribution, with only a small number of MCU showing a "string-like" pattern. Among the MCU events, 2-bit MCUs dominate, constituting 83.6% of all MCUs, while larger sized MCUs (>2 bits) account for 14.3%. The maximum observed MCU size was 7 bits. Furthermore, the spatial distribution of MCUs is primarily aligned along the direction of neutron incidence.
Based on the reverse analysis results, a device model was constructed, and Monte Carlo neutron transport simulations were performed. The simulation results reveal that secondary particles generated in the sensitive volume (SV) of the device by neutrons with energy E > 1 MeV are predominantly silicon ions (37.98%) and nitrogen ions (27.95%). Since the SV material is nitride, the interaction between neutrons and the SV is mainly elastic scattering, during which secondary particles are produced. Among the secondary particles generated in the SV, most propagate along the direction of neutron incidence, with a small number of secondary particles in the central region producing oblique tracks. The majority of secondary particles generated in the SV exhibit low LET values (<5 MeV·cm2·mg-1) and short ranges (<100 nm), and these secondary particles are the primary cause of SBU. However, approximately 1.2% of the ions exhibit high LET values (>10 MeV·cm2·mg-1), with the maximum LET value of secondary particles inthe SV reaching 12.05 MeV·cm2·mg-1. A small number of secondary particles with high LET values and long ranges are responsible for the generation of MCUs.-
Keywords:
- 3D NAND Flash /
- Atmospheric Neutron /
- Single Event Upset /
- Multi Cell Upset
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[1] Marinella M J 2021 IEEE Trans. Nucl. Sci. 68 546
[2] Righetti G P N 2017 IEEE International Integrated Circuit Reliability Workshop (IIRW) South Lake Tahoe, CA, USA, October 8-12, 2017 p51
[3] Mizoguchi K, Takahashi T, Aritome S, Takeuchi K 2017 IEEE International Memory Workshop (IMW) Monterey, CA, USA, May 14-17,2017 p119
[4] Bagatin M, Gerardin S, Paccagnella A, Beltrami S, Camerlenghi E, Bertuccio M, Costantino A, Zadeh A, Ferlet-Cavrois V, Santin G, Daly E 2018 IEEE Trans. Nucl. Sci. 65 318
[5] Bagatin M, Gerardin S, Paccagnella A, Beltrami S 2024 IEEE Trans. Nucl. Sci. 71 412
[6] Wilcox E P, Campola M J 2019 IEEE Radiation Effects Data Workshop (REDW) San Antonio, TX, USA, July 8-12, 2019 p238
[7] Coïc L, Augustin G, Serrano L, Guillermin J, Chatry N, Carron J, Ecoffet R 2022 Radiation Effects on Components and Systems Conference (RADECS) Venice, Italy, October 3-7, 2022 p1
[8] Oldham T R, Ladbury R L, Friendlich M, Kim H S, Berg M D, Irwin T L, Seidleck C, LaBel K A 2006 IEEE Trans. Nucl. Sci. 53 3217
[9] Schmidt H, Walter D, Gliem F, Nickson B, Harboe-Sorensen R, Virtanen A 2008 IEEE Radiation Effects Data Workshop (REDW) Tempe,AZ,USA, July 14-18, 2008 p38
[10] Irom F, Nguyen D N, Bagatin M, Cellere G, Gerardin S, Paccagnella A 2010 IEEE Trans. Nucl. Sci. 57 266
[11] Bagatin M, Gerardin S, Paccagnella A, Ferlet-Cavrois V 2013 IEEE Trans. Nucl. Sci. 60 2675
[12] Wilcox E P, Breeding M L, Casey M C, Pellish J A, Reed R A, Alles M L, Schrimpf R D 2021 IEEE Trans. Nucl. Sci. 68 835
[13] Conway P M, Gadlage M J, Ingalls J D, Williams A M, Bruce D I, Bossev D P 2019 IEEE Trans. Nucl. Sci. 66 466
[14] Chen D, Wilcox E, Ladbury R L, Kim H, Phan A, Seidleck C, LaBel K A 2017 IEEE Trans. Nucl. Sci. 64 332
[15] Chen D, Wilcox E, Ladbury R L, Seidleck C, Kim H, Phan A, LaBel K A 2018 IEEE Trans. Nucl. Sci. 65 19
[16] Jiao Y, Yang J, Wang Q, Xi K, Li X, Liu Y, Chen Q, Li Z, Sun Y, Zhao P, Liu J 2025 IEEE Trans. Nucl. Sci. 72 2689
[17] Bagatin M, Gerardin S, Paccagnella A, Beltrami S, Cazzaniga C, Frost C D 2019 IEEE Trans. Nucl. Sci. 66 1361
[18] Zheng X, Wang Y, Mo R, Wei Z, Mei B, Liu C, Huo M, Xiao L 2025 6th International Conference on Radiation Effects of Electronic Devices (ICREED) Yangzhou, China, April 16-18,2025, p1
[19] Yu Q Z, Yin W, Liang T J 2011 Acta Phys.Sin, 60 052501(in Chinese)[于全芝, 殷雯,梁天骄2011 60 052501]
[20] Shen F, Liang T R, Yin W,Yu Q Z,Zuo T S,Yao Z E,Zhu T,Liang T J. 2014 ActaPhys.Sin. 63 152801(in Chinese)[沈飞,梁泰然,殷雯,于全芝,左太森, 姚泽恩,朱涛,梁天骄2014 63 152801]
[21] Wang X, Zhang F Q, Chen W, Guo X Q,Ding L L,Luo Y H 2019 Acta Phys.Sin. 68 052901(in Chinese)[王勋,张凤祁,陈伟,郭晓强,丁李利,罗尹虹物 理学报2019 68 052901]
[22] YU Q.2024 Applied Radiation and Isotopes:Including Data, Instrumentation and Methods for Use in Agriculture, Industry and Medicine 203 111075
[23] Zhang Z, Lei Z F, Tong T, Li X H, Xi K, Peng C, Shi Q, He Y J, Huang Y, En Y F 2019 IEEE Trans. Nucl. Sci. 66 1368
[24] Park J, Han J-W, Yoon G, Go D, Kim D, Kim J, Lee J-S 2022 IEEE Trans. Electron Dev. 69 6089
[25] TechInsights,https://www.techinsights.com/blog/ymtcs-xtacking-30-not-what-tec hinsights-was-expecting-see[2025-11-27]
[26] Zhang Z G, Liu J,Sun Y M, Hou M D, Tong T,Gu S, Liu T Q, Geng C, Xi K, Yao H J, Luo J, Duan J L, Mo D, Su H, Lei Z F, En Y F, Huang Y 2014 10th International Conference on Reliability, Maintainability and Safety (ICRAMS) Guangzhou,China,August 6-8,2014 p114
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