Total ionizing dose effect of double-trench SiC MOSFET

ZHU Wenlu; GUO Hongxia; LI Yangfan; MA Wuying; ZHANG Fengqi; BAI Ruxue; ZHONG Xiangli; LI Jifang; CAO Yanhui; JU Anan

doi:10.7498/aps.74.20241641

Search

x

ZHU Wenlu, GUO Hongxia, LI Yangfan, MA Wuying, ZHANG Fengqi, BAI Ruxue, ZHONG Xiangli, LI Jifang, CAO Yanhui, JU Anan. Total ionizing dose effect of double-trench SiC MOSFETJ. Acta Physica Sinica, 2025, 74(5): 056101. DOI: 10.7498/aps.74.20241641

Citation:

ZHU Wenlu, GUO Hongxia, LI Yangfan, MA Wuying, ZHANG Fengqi, BAI Ruxue, ZHONG Xiangli, LI Jifang, CAO Yanhui, JU Anan. Total ionizing dose effect of double-trench SiC MOSFETJ. Acta Physica Sinica, 2025, 74(5): 056101. DOI: 10.7498/aps.74.20241641

Citation:

ZHU Wenlu, GUO Hongxia, LI Yangfan, MA Wuying, ZHANG Fengqi, BAI Ruxue, ZHONG Xiangli, LI Jifang, CAO Yanhui, JU Anan. Total ionizing dose effect of double-trench SiC MOSFETJ. Acta Physica Sinica, 2025, 74(5): 056101. DOI: 10.7498/aps.74.20241641