Effect of heavy ion radiation on low frequency noise characteristics of AlGaN/GaN high electron mobility transistors

Lü Ling; Xing Mu-Han; Xue Bo-Rui; Cao Yan-Rong; Hu Pei-Pei; Zheng Xue-Feng; Ma Xiao-Hua; Hao Yue

doi:10.7498/aps.73.20221360

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Lü Ling, Xing Mu-Han, Xue Bo-Rui, Cao Yan-Rong, Hu Pei-Pei, Zheng Xue-Feng, Ma Xiao-Hua, Hao Yue. Effect of heavy ion radiation on low frequency noise characteristics of AlGaN/GaN high electron mobility transistorsJ. Acta Physica Sinica, 2024, 73(3): 036103. DOI: 10.7498/aps.73.20221360

Citation:

Lü Ling, Xing Mu-Han, Xue Bo-Rui, Cao Yan-Rong, Hu Pei-Pei, Zheng Xue-Feng, Ma Xiao-Hua, Hao Yue. Effect of heavy ion radiation on low frequency noise characteristics of AlGaN/GaN high electron mobility transistorsJ. Acta Physica Sinica, 2024, 73(3): 036103. DOI: 10.7498/aps.73.20221360

Citation:

Lü Ling, Xing Mu-Han, Xue Bo-Rui, Cao Yan-Rong, Hu Pei-Pei, Zheng Xue-Feng, Ma Xiao-Hua, Hao Yue. Effect of heavy ion radiation on low frequency noise characteristics of AlGaN/GaN high electron mobility transistorsJ. Acta Physica Sinica, 2024, 73(3): 036103. DOI: 10.7498/aps.73.20221360