Ultra-compact In<sub>2</sub>Se<sub>3</sub> tunable power splitter based on direct binary search algorithm

Zhang Yi-Yi; Wei Xue-Ling; Nong Jie; Ma Han-Si; Ye Zi-Yang; Xu Wen-Jie; Zhang Zhen-Rong; Yang Jun-Bo

doi:10.7498/aps.72.20230459

Abstract

Power splitter with multi-mode interference coupler structure has many advantages, such as large bandwidth and better manufacturing robustness, and has received much attention for a long time. Conventional power beam splitters usually use algorithms or numerical simulation to achieve a single beam splitting ratio; if the circuit has the requirement for power, the structural parameters of the device need changing and recalculating. In order to improve the utilization rate of power splitter in photonic integrated circuit and meet various demands for different optical paths, an ultra-compact tunable power splitter based on phase change material In₂Se₃ with a 1×2 multimode interference coupler structure is proposed in this paper. The device consists of an input waveguide, a coupling region, and two output waveguides with a coupling region of only 2.4 μm× 3.6 μm in size, which contains several circular holes of the same size and is filled with SiO₂. The number and location of circular holes in the coupling region are optimized by direct binary search algorithm, making the device achieve different power splitting ratios by using only the high refractive index contrast variation between the two crystalline states (α and β) of In₂Se₃ without changing any other structural parameter. In a wavelength range of 1540–1560 nm, three splitting ratios of 1∶1, 1∶1.5 and 1∶2 are achieved by this device, and the insertion losses of these three beam splitting ratios are less than 0.27, 0.13 and 0.17 dB, respectively. In addition, the robustness and balance of the device are analyzed and discussed, and compared with those of the power splitter of the same size designed by SOI platform and several power beam splitters reported in recent years, demonstrating the compact structure and simple regulation of this power splitter based on the phase change material In₂Se₃, its good robustness, and its possibility of application on photonic integrated circuits.

Keywords:

Authors and contacts

1.
Guangxi Key Laboratory of Multimedia Communication and Network Technology, College of Computer and Electronic Information, Guangxi University, Nanning 530004, China
2.
Experimental Center of Material Science, National University of Defense Technology, Changsha 410073, China
3.
School of Microelectronics, South China University of Technology, Guangzhou 511442, China

Corresponding author: Zhang Zhen-Rong, zzr76@gxu.edu.cn ; Yang Jun-Bo, yangjunbo@nudt.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 12272407, 62275269, 62275271), the National Key R & D Program of China (Grant No. 2022YFF0706005), and the Guangdong-Guangxi Joint Scientific Key Fund, China (Grant No. 2021GXNSFDA076001).

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References

[1]	Zhu J B, Chao Q, Huang H Y, Zhao Y X, Li Y, Tao L, She X J, Liao H, Huang R, Zhu Z J, Liu X, Sheng Z, Gan F W 2021 Appl. Opt. 60 413 Google Scholar
[2]	Zhang C P, Zhang M, Xie Y W, Shi Y C, Kumar R, Panepucci R R, Dai D X 2020 Photonics Res. 8 1171 Google Scholar
[3]	Fang Z R, Chen R, Zhang J Y, Xu P P, Majumdar A 2022 Conference on Lasers and Electro-Optics San Jose, California United States, May 15–20, 2022 pp1,2
[4]	Wang N N, Li T T, Sun B S, Wang Z, Zhou L J, Gu T Y 2021 Opt. Lett. 46 4088 Google Scholar
[5]	Song C M, Gao Y X, Wang G X, Chen Y M, Xu P P, Gu C J, Shi Y C, Shen X 2022 Opt. Express 30 30430 Google Scholar
[6]	Tao X, Gu Y 2013 Nano Lett. 13 3501 Google Scholar
[7]	Xu K, Jiang W, Gao X S, Zhao Z J, Low T, Zhu W J 2020 Nanoscale 12 23488 Google Scholar
[8]	Lee H, Kang D H, Tran L 2005 Mater. Sci. Eng. , B 119 196 Google Scholar
[9]	Botcha V D, Hong Y H, Huang Z H, Li Z W, Liu Q, Wu J, Lu Y M, Liu X K 2019 J. Alloys Compd. 773 698 Google Scholar
[10]	Lee H, Kang D H 2005 Jpn. J. Appl. Phys. 44 4759 Google Scholar
[11]	Huang Y T, Chen N K, Li Z Z, Wang X P, Sun H B, Zhang S B, Li X B 2022 InfoMat 4 e12341 Google Scholar
[12]	Li T T, Wang Y, Li W, Mao D, Benmore C J, Evangelista I, Xing H D, Li Q, Wang F F, Sivaraman G, Janotti A, Law S, Gu T Y 2022 Adv. Mater. 34 e2108261 Google Scholar
[13]	Taghinejad H, Abdollahramezani S, Eftekhar A A, Fan T R, Hosseinnia A H, Hemmatyar O, Dorche A E, Gallmon A, Adibi A 2021 Opt. Express 29 20449 Google Scholar
[14]	Zheng J J, Khanolkar A, Xu P P, Colburn S, Deshmukh S, Myers J, Frantz J, Pop E, Hendrickson J, Doylend J, Boechler N, Majumdar A 2018 Opt. Mater. Express 8 1551 Google Scholar
[15]	Yuan H, Wu J G, Zhang J P, Pu X, Zhang Z F, Yu Y, Yang J B 2022 Nanomaterials 12 669 Google Scholar
[16]	Ríos C, Zhang Y F, Shalaginov M Y, Deckoff-Jones S, Wang H Z, An S S, Zhang H L, Kang M, Richardson K A, Roberts C, Chou J B, Liberman V, Vitale S A, Kong J, Gu T, Hu J J 2021 Adv. Photonics Res. 2 2000034 Google Scholar
[17]	Liu T Y, Xu Y, Liu S Y, Sun X Q, Zhang D M 2022 Opt. Mater. Express 12 2584 Google Scholar
[18]	Su Y X, Liu D M, Zhang M M 2022 Opt. Express 30 40379 Google Scholar
[19]	Wei J, Rajesh M, Berardi S R 2021 Opt. Mater. Express 11 3007 Google Scholar
[20]	Li T T, Wang Y, Xing H D, Li Q, Wang F F, Soman A, Law S, Gu T Y 2021 Conference on Lasers and Electro-optics Electr Network, May 9–14, 2021 pSM4B.5
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[22]	Li J Y, Li H D, Niu X B, Wang Z M 2021 ACS Nano 15 18683 Google Scholar
[23]	Forouzmand A, Mosallaei H 2018 Opt. Express 26 17948 Google Scholar
[24]	Xu K, Liu L, Wen X, Sun W Z, Zhang N, Yi N B, Sun S, Xiao S M, Song Q H 2017 Opt. Lett. 42 855 Google Scholar

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图 1 器件整体结构　(a) 优化后得到的结果和器件的参数, 其中Out1与Out2为器件的两个输出端口; (b) 初始化时划分好的像素点网格和圆孔的初始位置

Figure 1. Overall device structure: (a) Optimized results and device parameters, where Out1 and Out2 are the two output ports of the device; (b) the initial position of the divided pixel grid and the air hole during initialization.

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图 2 DBS流程图

Figure 2. DBS Flowchart.

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图 3 通过模拟仿真得到的3种分束比下的结果　(a) In₂Se₃在α态时实现的1∶1分束比; (b) 1∶1分束比下两个端口的透过率; (c) In₂Se₃在中间混合态时实现的1∶1.5分束比; (d) 1∶1.5分束比下两个端口的透过率; (e) In₂Se₃在β态时实现的1∶2分束比; (f) 1∶2分束比下两个端口的透过率

Figure 3. Results obtained by simulation for three beam splitting ratios: (a) 1:1 beam splitting ratio achieved for In₂Se₃ in the α state; (b) transmittance of two ports at 1∶1 beam splitting ratio; (c) 1∶1.5 beam splitting ratio achieved by In₂Se₃ in the intermediate mixed state; (d) transmittance of both ports at 1∶1.5 beam splitting ratio. (e) 1∶2 beam splitting ratio achieved by In₂Se₃ in the beta state; (f) transmittance of two ports at 1∶2 beam splitting ratio.

DownLoad: Full-Size Img PowerPoint

图 4 根据(3)式和(4)式得到的IL与端口平衡误差　(a) 由(3)式计算得到的In₂Se₃在3种状态下的IL; (b) 由(4)式计算得到的In₂Se₃在3种状态下的端口平衡误差

Figure 4. IL and port balance error obtained from Eq. (3) and Eq. (4): (a) IL of In₂Se₃ in three states calculated from Eq. (3); (b) port balance error of In₂Se₃ in three states calculated from Eq. (4).

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图 5 (a) In₂Se₃的α态与β态在混合态中占比对折射率的影响; (b) In₂Se₃在相变过程中实现的分束比变化

Figure 5. (a) Influence of the proportion of α and β states of In₂Se₃ in the mixed state on the refractive index; (b) variation of the upper and lower port splitting ratio in In₂Se₃ phase transition.

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图 6 SOI平台与In₂Se₃设计的功率分束器在实现相同分束比时的打孔情况　(a) SOI平台实现1∶1, 1∶1.5, 1∶2分束比的功率分束器; (b) In₂Se₃材料实现 1∶1, 1∶1.5, 1∶2分束比的功率分束器; (c) SOI平台与In₂Se₃实现各个分束比时的IL对比

Figure 6. Perforation of SOI platform and In₂Se₃ designed power beam splitters in achieving the same beam splitting ratio: (a) SOI platform realizing power beam splitters with 1∶1, 1∶1.5, and 1∶2 beam splitting ratios; (b) In₂Se₃ material realizing power beam splitters with 1∶1, 1∶1.5, and 1∶2 beam splitting ratios; (c) IL comparison between SOI platform and In₂Se₃ when realizing each beam splitting ratio.

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图 7 圆孔直径对器件的影响　(a) In₂Se₃在α态时圆孔直径误差在5 nm范围内的IL; (b) In₂Se₃在中间混合态时圆孔直径误差在5 nm范围内的IL; (c) In₂Se₃在β态时圆孔直径误差在5 nm范围内的IL; (d) In₂Se₃在α态时圆孔直径误差在5 nm范围内的平衡误差; (e) In₂Se₃在中间混合态时圆孔直径误差在5 nm范围内的平衡误差; (f) In₂Se₃在β态时圆孔直径误差在5 nm范围内的平衡误差

Figure 7. Effect of air circular hole diameter on the device: (a) IL of In₂Se₃ in α state with circular hole diameter error in the range of 5 nm; (b) IL of In₂Se₃ in intermediate mixed state with circular hole diameter error in the range of 5 nm; (c) IL of In₂Se₃ in β state with circular hole diameter error in the range of 5 nm; (d) the equilibrium error of In₂Se₃ in α state with circular hole diameter error in the range of 5 nm; (e) the equilibrium error of In₂Se₃ in the intermediate mixed state with a circular hole diameter error in the range of 5 nm; (f) the equilibrium error of In₂Se₃ in the β-state with a circular hole diameter error in the range of 5 nm.

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表 1 几种相变材料的光学性能比较(A, 非晶态; C, 晶态; k, 消光系数)

Table 1. Comparison of optical properties of several phase change materials ( A, amorphous; C, crystalline; k, extinction coefficients).

	Phase change temperature/°C	Δn (1550 nm)	Reversibility	k (1550 nm)
Ge₂Sb₂Te₅ (GST)	A → C, >600^[13] C → A, 200^[14]	2.85^[15]	yes	k_A = 0.12, k_C = 1.49^[15]
Ge₂Sb₂Se₄Te₁ (GSST)	A → C, ～270 C → A, >600^[16]	1.625^[17]	yes	k_A ～ 0, k_C = 0.42^[17]
Sb₂Se₃	A → C,～200 C → A, ～600^[18]	1.22^[18]	yes	k_A ~ 0, k_C ~ 0^[19]
In₂Se₃	α → β, 200 β → β', 200 β' → α, 60^[12]	~0.35^[12]	yes	k_α = 0, k_β = 0^[12]

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表 2 目前报道的几种功率分束器与本文设计的功率分束器的比较

Table 2. Comparison of several power splitters reported at present with the power splitter designed in this paper.

	文献[24](2017)	文献[1](2021)	文献[15](2022)	This work
Dimension	3.6 µm×3.6 µm	L_taper = 80 µm	2.4 µm×2.4 µm	3.6 µm×2.4 µm
Material	Si	Si₃N₄	GSST	In₂Se₃
Type	MMI	adiabatic tapers	MMI	MMI
Structure
Bandwidth/nm	1530—1560	1500—1600	1530—1560	1540—1560
Adjustable	no	no	yes	yes
Excess loss/dB	0.97	0.02	<0.5 (1∶1) <0.83 (1.5∶1) <1.2 (2∶1) <1.18 (2.5∶1)	<0.27 (1∶1) <0.13 (1∶1.5) <0.17 (1∶2)
Method	FSM	Numerical simulations	DBS	DBS

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[1]	Zhu J B, Chao Q, Huang H Y, Zhao Y X, Li Y, Tao L, She X J, Liao H, Huang R, Zhu Z J, Liu X, Sheng Z, Gan F W 2021 Appl. Opt. 60 413 Google Scholar
[2]	Zhang C P, Zhang M, Xie Y W, Shi Y C, Kumar R, Panepucci R R, Dai D X 2020 Photonics Res. 8 1171 Google Scholar
[3]	Fang Z R, Chen R, Zhang J Y, Xu P P, Majumdar A 2022 Conference on Lasers and Electro-Optics San Jose, California United States, May 15–20, 2022 pp1,2
[4]	Wang N N, Li T T, Sun B S, Wang Z, Zhou L J, Gu T Y 2021 Opt. Lett. 46 4088 Google Scholar
[5]	Song C M, Gao Y X, Wang G X, Chen Y M, Xu P P, Gu C J, Shi Y C, Shen X 2022 Opt. Express 30 30430 Google Scholar
[6]	Tao X, Gu Y 2013 Nano Lett. 13 3501 Google Scholar
[7]	Xu K, Jiang W, Gao X S, Zhao Z J, Low T, Zhu W J 2020 Nanoscale 12 23488 Google Scholar
[8]	Lee H, Kang D H, Tran L 2005 Mater. Sci. Eng. , B 119 196 Google Scholar
[9]	Botcha V D, Hong Y H, Huang Z H, Li Z W, Liu Q, Wu J, Lu Y M, Liu X K 2019 J. Alloys Compd. 773 698 Google Scholar
[10]	Lee H, Kang D H 2005 Jpn. J. Appl. Phys. 44 4759 Google Scholar
[11]	Huang Y T, Chen N K, Li Z Z, Wang X P, Sun H B, Zhang S B, Li X B 2022 InfoMat 4 e12341 Google Scholar
[12]	Li T T, Wang Y, Li W, Mao D, Benmore C J, Evangelista I, Xing H D, Li Q, Wang F F, Sivaraman G, Janotti A, Law S, Gu T Y 2022 Adv. Mater. 34 e2108261 Google Scholar
[13]	Taghinejad H, Abdollahramezani S, Eftekhar A A, Fan T R, Hosseinnia A H, Hemmatyar O, Dorche A E, Gallmon A, Adibi A 2021 Opt. Express 29 20449 Google Scholar
[14]	Zheng J J, Khanolkar A, Xu P P, Colburn S, Deshmukh S, Myers J, Frantz J, Pop E, Hendrickson J, Doylend J, Boechler N, Majumdar A 2018 Opt. Mater. Express 8 1551 Google Scholar
[15]	Yuan H, Wu J G, Zhang J P, Pu X, Zhang Z F, Yu Y, Yang J B 2022 Nanomaterials 12 669 Google Scholar
[16]	Ríos C, Zhang Y F, Shalaginov M Y, Deckoff-Jones S, Wang H Z, An S S, Zhang H L, Kang M, Richardson K A, Roberts C, Chou J B, Liberman V, Vitale S A, Kong J, Gu T, Hu J J 2021 Adv. Photonics Res. 2 2000034 Google Scholar
[17]	Liu T Y, Xu Y, Liu S Y, Sun X Q, Zhang D M 2022 Opt. Mater. Express 12 2584 Google Scholar
[18]	Su Y X, Liu D M, Zhang M M 2022 Opt. Express 30 40379 Google Scholar
[19]	Wei J, Rajesh M, Berardi S R 2021 Opt. Mater. Express 11 3007 Google Scholar
[20]	Li T T, Wang Y, Xing H D, Li Q, Wang F F, Soman A, Law S, Gu T Y 2021 Conference on Lasers and Electro-optics Electr Network, May 9–14, 2021 pSM4B.5
[21]	Behera B, Sutar B C, Pradhan N R 2021 Emergent Mater. 4 847 Google Scholar
[22]	Li J Y, Li H D, Niu X B, Wang Z M 2021 ACS Nano 15 18683 Google Scholar
[23]	Forouzmand A, Mosallaei H 2018 Opt. Express 26 17948 Google Scholar
[24]	Xu K, Liu L, Wen X, Sun W Z, Zhang N, Yi N B, Sun S, Xiao S M, Song Q H 2017 Opt. Lett. 42 855 Google Scholar

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Ultra-compact In₂Se₃ tunable power splitter based on direct binary search algorithm

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Corresponding author: Zhang Zhen-Rong, zzr76@gxu.edu.cn ; Yang Jun-Bo, yangjunbo@nudt.edu.cn

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Ultra-compact In2Se3 tunable power splitter based on direct binary search algorithm

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Corresponding author: Zhang Zhen-Rong, zzr76@gxu.edu.cn ; Yang Jun-Bo, yangjunbo@nudt.edu.cn

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Ultra-compact In₂Se₃ tunable power splitter based on direct binary search algorithm