Sol-gel indium-zinc-tin-oxide thin film transistor pixel array with superior stabilityunder negative bias illumination stress

Jing Bin; Xu Meng; Peng Cong; Chen Long-Long; Zhang Jian-Hua; Li Xi-Feng

doi:10.7498/aps.71.20220154

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Jing Bin, Xu Meng, Peng Cong, Chen Long-Long, Zhang Jian-Hua, Li Xi-Feng. Sol-gel indium-zinc-tin-oxide thin film transistor pixel array with superior stabilityunder negative bias illumination stressJ. Acta Physica Sinica, 2022, 71(13): 138502. DOI: 10.7498/aps.71.20220154

Citation:

Jing Bin, Xu Meng, Peng Cong, Chen Long-Long, Zhang Jian-Hua, Li Xi-Feng. Sol-gel indium-zinc-tin-oxide thin film transistor pixel array with superior stabilityunder negative bias illumination stressJ. Acta Physica Sinica, 2022, 71(13): 138502. DOI: 10.7498/aps.71.20220154

Citation:

Jing Bin, Xu Meng, Peng Cong, Chen Long-Long, Zhang Jian-Hua, Li Xi-Feng. Sol-gel indium-zinc-tin-oxide thin film transistor pixel array with superior stabilityunder negative bias illumination stressJ. Acta Physica Sinica, 2022, 71(13): 138502. DOI: 10.7498/aps.71.20220154