Numerical simulation of single-event effects in fully-depleted silicon-on-insulator HfO<sub>2</sub>-based ferroelectric field-effect transistor memory cell -

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Shen Rui-Xiang, Zhang Hong, Song Hong-Jia, Hou Peng-Fei, Li Bo, Liao Min, Guo Hong-Xia, Wang Jin-Bin, Zhong Xiang-Li. Numerical simulation of single-event effects in fully-depleted silicon-on-insulator HfO2-based ferroelectric field-effect transistor memory cellJ. Acta Physica Sinica, 2022, 71(6): 068501. DOI: 10.7498/aps.71.20211655

Citation:

Shen Rui-Xiang, Zhang Hong, Song Hong-Jia, Hou Peng-Fei, Li Bo, Liao Min, Guo Hong-Xia, Wang Jin-Bin, Zhong Xiang-Li. Numerical simulation of single-event effects in fully-depleted silicon-on-insulator HfO2-based ferroelectric field-effect transistor memory cellJ. Acta Physica Sinica, 2022, 71(6): 068501. DOI: 10.7498/aps.71.20211655

Shen Rui-Xiang, Zhang Hong, Song Hong-Jia, Hou Peng-Fei, Li Bo, Liao Min, Guo Hong-Xia, Wang Jin-Bin, Zhong Xiang-Li. Numerical simulation of single-event effects in fully-depleted silicon-on-insulator HfO2-based ferroelectric field-effect transistor memory cellJ. Acta Physica Sinica, 2022, 71(6): 068501. DOI: 10.7498/aps.71.20211655

Citation:

Shen Rui-Xiang, Zhang Hong, Song Hong-Jia, Hou Peng-Fei, Li Bo, Liao Min, Guo Hong-Xia, Wang Jin-Bin, Zhong Xiang-Li. Numerical simulation of single-event effects in fully-depleted silicon-on-insulator HfO2-based ferroelectric field-effect transistor memory cellJ. Acta Physica Sinica, 2022, 71(6): 068501. DOI: 10.7498/aps.71.20211655

Numerical simulation of single-event effects in fully-depleted silicon-on-insulator HfO₂-based ferroelectric field-effect transistor memory cell

Acta Phys. Sin., 2022, 71(6): 068501.

DOI: 10.7498/aps.71.20211655

CSTR: 32037.14.aps.71.20211655

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