Gu Zhao-Qiao, Guo Hong-Xia, Pan Xiao-Yu, Lei Zhi-Feng, Zhang Feng-Qi, Zhang Hong, Ju An-An, Liu Yi-Tian. Total dose effect and annealing characteristics of silicon carbide field effect transistor devices under different stressesJ. Acta Physica Sinica, 2021, 70(16): 166101. DOI: 10.7498/aps.70.20210515