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Gao Fei, Feng Qi, Wang Ting, Zhang Jian-Jun. Controllable growth of GeSi nanowires on trench patterned Si(001) substrateJ. Acta Physica Sinica, 2020, 69(2): 028102. DOI: 10.7498/aps.69.20191407
Citation: Gao Fei, Feng Qi, Wang Ting, Zhang Jian-Jun. Controllable growth of GeSi nanowires on trench patterned Si(001) substrateJ. Acta Physica Sinica, 2020, 69(2): 028102. DOI: 10.7498/aps.69.20191407
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Controllable growth of GeSi nanowires on trench patterned Si(001) substrate

Acta Phys. Sin., 2020, 69(2): 028102.
DOI: 10.7498/aps.69.20191407
CSTR: 32037.14.aps.69.20191407
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