Application of amorphous-WO<sub>3</sub> simulated memristors with oxygen vacancy concentration gradients in neuromorphic computing

WANG Hongjun; ZHANG Miao; ZHANG Yunfei; WANG Xin; ZHOU Jing; ZHU Yuanyuan

doi:10.7498/aps.75.20251348

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WANG Hongjun, ZHANG Miao, ZHANG Yunfei, WANG Xin, ZHOU Jing, ZHU Yuanyuan. Application of amorphous-WO3 simulated memristors with oxygen vacancy concentration gradients in neuromorphic computingJ. Acta Physica Sinica, 2026, 75(4): 040704. DOI: 10.7498/aps.75.20251348

Citation:

WANG Hongjun, ZHANG Miao, ZHANG Yunfei, WANG Xin, ZHOU Jing, ZHU Yuanyuan. Application of amorphous-WO3 simulated memristors with oxygen vacancy concentration gradients in neuromorphic computingJ. Acta Physica Sinica, 2026, 75(4): 040704. DOI: 10.7498/aps.75.20251348

Citation:

WANG Hongjun, ZHANG Miao, ZHANG Yunfei, WANG Xin, ZHOU Jing, ZHU Yuanyuan. Application of amorphous-WO3 simulated memristors with oxygen vacancy concentration gradients in neuromorphic computingJ. Acta Physica Sinica, 2026, 75(4): 040704. DOI: 10.7498/aps.75.20251348