JU Guangxu, LIN Qihui, XU Erqi, WANG Xinqiang, GE Weikun, DONG Yuhui, XU Ke, SHEN Bo. Research progress of growth kinetics of nitride metal-organic chemical vapor deposition epitaxy under in situ X-ray characterizationJ. Acta Physica Sinica, 2026, 75(4): 040701. DOI: 10.7498/aps.75.20251197
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Citation:
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JU Guangxu, LIN Qihui, XU Erqi, WANG Xinqiang, GE Weikun, DONG Yuhui, XU Ke, SHEN Bo. Research progress of growth kinetics of nitride metal-organic chemical vapor deposition epitaxy under in situ X-ray characterizationJ. Acta Physica Sinica, 2026, 75(4): 040701. DOI: 10.7498/aps.75.20251197
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JU Guangxu, LIN Qihui, XU Erqi, WANG Xinqiang, GE Weikun, DONG Yuhui, XU Ke, SHEN Bo. Research progress of growth kinetics of nitride metal-organic chemical vapor deposition epitaxy under in situ X-ray characterizationJ. Acta Physica Sinica, 2026, 75(4): 040701. DOI: 10.7498/aps.75.20251197
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Citation:
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JU Guangxu, LIN Qihui, XU Erqi, WANG Xinqiang, GE Weikun, DONG Yuhui, XU Ke, SHEN Bo. Research progress of growth kinetics of nitride metal-organic chemical vapor deposition epitaxy under in situ X-ray characterizationJ. Acta Physica Sinica, 2026, 75(4): 040701. DOI: 10.7498/aps.75.20251197
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