Ga2O3-based metal-insulator-semiconductor solar-blind ultraviolet photodetector with HfO2 inserting layer

Dong Dian-Meng; Wang Cheng; Zhang Qing-Yi; Zhang Tao; Yang Yong-Tao; Xia Han-Chi; Wang Yue-Hui; Wu Zhen-Ping

doi:10.7498/aps.72.20222222

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Dong Dian-Meng, Wang Cheng, Zhang Qing-Yi, Zhang Tao, Yang Yong-Tao, Xia Han-Chi, Wang Yue-Hui, Wu Zhen-Ping. Ga2O3-based metal-insulator-semiconductor solar-blind ultraviolet photodetector with HfO2 inserting layerJ. Acta Physica Sinica, 2023, 72(9): 097302. DOI: 10.7498/aps.72.20222222

Citation:

Dong Dian-Meng, Wang Cheng, Zhang Qing-Yi, Zhang Tao, Yang Yong-Tao, Xia Han-Chi, Wang Yue-Hui, Wu Zhen-Ping. Ga2O3-based metal-insulator-semiconductor solar-blind ultraviolet photodetector with HfO2 inserting layerJ. Acta Physica Sinica, 2023, 72(9): 097302. DOI: 10.7498/aps.72.20222222

Citation:

Dong Dian-Meng, Wang Cheng, Zhang Qing-Yi, Zhang Tao, Yang Yong-Tao, Xia Han-Chi, Wang Yue-Hui, Wu Zhen-Ping. Ga2O3-based metal-insulator-semiconductor solar-blind ultraviolet photodetector with HfO2 inserting layerJ. Acta Physica Sinica, 2023, 72(9): 097302. DOI: 10.7498/aps.72.20222222