Radiation hardening by process technology  for high voltage nMOSFET in 180 nm embeded flash process

Chen Xiao-Liang; Sun Wei-Feng

doi:10.7498/aps.71.20221172

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Chen Xiao-Liang, Sun Wei-Feng. Radiation hardening by process technology for high voltage nMOSFET in 180 nm embeded flash processJ. Acta Physica Sinica, 2022, 71(23): 236102. DOI: 10.7498/aps.71.20221172

Citation:

Chen Xiao-Liang, Sun Wei-Feng. Radiation hardening by process technology for high voltage nMOSFET in 180 nm embeded flash processJ. Acta Physica Sinica, 2022, 71(23): 236102. DOI: 10.7498/aps.71.20221172

Citation:

Chen Xiao-Liang, Sun Wei-Feng. Radiation hardening by process technology for high voltage nMOSFET in 180 nm embeded flash processJ. Acta Physica Sinica, 2022, 71(23): 236102. DOI: 10.7498/aps.71.20221172