Three-dimensional simulation of total ionizing dose effect on SiGe heterojunction bipolor transistor

Zhang Jin-Xin; Wang Xin; Guo Hong-Xia; Feng Juan; Lü Ling; Li Pei; Yan Yun-Yi; Wu Xian-Xiang; Wang Hui

doi:10.7498/aps.71.20211795

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Zhang Jin-Xin, Wang Xin, Guo Hong-Xia, Feng Juan, Lü Ling, Li Pei, Yan Yun-Yi, Wu Xian-Xiang, Wang Hui. Three-dimensional simulation of total ionizing dose effect on SiGe heterojunction bipolor transistorJ. Acta Physica Sinica, 2022, 71(5): 058502. DOI: 10.7498/aps.71.20211795

Citation:

Zhang Jin-Xin, Wang Xin, Guo Hong-Xia, Feng Juan, Lü Ling, Li Pei, Yan Yun-Yi, Wu Xian-Xiang, Wang Hui. Three-dimensional simulation of total ionizing dose effect on SiGe heterojunction bipolor transistorJ. Acta Physica Sinica, 2022, 71(5): 058502. DOI: 10.7498/aps.71.20211795

Citation:

Zhang Jin-Xin, Wang Xin, Guo Hong-Xia, Feng Juan, Lü Ling, Li Pei, Yan Yun-Yi, Wu Xian-Xiang, Wang Hui. Three-dimensional simulation of total ionizing dose effect on SiGe heterojunction bipolor transistorJ. Acta Physica Sinica, 2022, 71(5): 058502. DOI: 10.7498/aps.71.20211795