Raman thermometry based thermal resistance analysis of GaN high electron mobility transistors with copper-based composite flanges

Liu Kang; Sun Hua-Rui

doi:10.7498/aps.69.20190921

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Liu Kang, Sun Hua-Rui. Raman thermometry based thermal resistance analysis of GaN high electron mobility transistors with copper-based composite flangesJ. Acta Physica Sinica, 2020, 69(2): 028501. DOI: 10.7498/aps.69.20190921

Citation:

Liu Kang, Sun Hua-Rui. Raman thermometry based thermal resistance analysis of GaN high electron mobility transistors with copper-based composite flangesJ. Acta Physica Sinica, 2020, 69(2): 028501. DOI: 10.7498/aps.69.20190921

Citation:

Liu Kang, Sun Hua-Rui. Raman thermometry based thermal resistance analysis of GaN high electron mobility transistors with copper-based composite flangesJ. Acta Physica Sinica, 2020, 69(2): 028501. DOI: 10.7498/aps.69.20190921