Effects of process parameters on melt-crystal interface in Czochralski silicon crystal growth

Zhang Ni<sup>1\2</sup>; Liu Ding<sup>1\2</sup>; Feng Xue-Liang

doi:10.7498/aps.67.20180305

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Zhang Ni1\2, Liu Ding1\2, Feng Xue-Liang. Effects of process parameters on melt-crystal interface in Czochralski silicon crystal growthJ. Acta Physica Sinica, 2018, 67(21): 218701. DOI: 10.7498/aps.67.20180305

Citation:

Zhang Ni1\2, Liu Ding1\2, Feng Xue-Liang. Effects of process parameters on melt-crystal interface in Czochralski silicon crystal growthJ. Acta Physica Sinica, 2018, 67(21): 218701. DOI: 10.7498/aps.67.20180305

Citation:

Zhang Ni1\2, Liu Ding1\2, Feng Xue-Liang. Effects of process parameters on melt-crystal interface in Czochralski silicon crystal growthJ. Acta Physica Sinica, 2018, 67(21): 218701. DOI: 10.7498/aps.67.20180305