Li Shu-Ping, Zhang Zhi-Li, Fu Kai, Yu Guo-Hao, Cai Yong, Zhang Bao-Shun. High-performance AlGaN/GaN MIS-HEMT device based on in situ plasma nitriding and low power chemical vapor deposition Si3N4 gate dielectricsJ. Acta Physica Sinica, 2017, 66(19): 197301. DOI: 10.7498/aps.66.197301