Influence of the external condition on the damage process of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

Xi Xiao-Wen; Chai Chang-Chun; Liu Yang; Yang Yin-Tang; Fan Qing-Yang

doi:10.7498/aps.66.078401

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Xi Xiao-Wen, Chai Chang-Chun, Liu Yang, Yang Yin-Tang, Fan Qing-Yang. Influence of the external condition on the damage process of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulseJ. Acta Physica Sinica, 2017, 66(7): 078401. DOI: 10.7498/aps.66.078401

Citation:

Xi Xiao-Wen, Chai Chang-Chun, Liu Yang, Yang Yin-Tang, Fan Qing-Yang. Influence of the external condition on the damage process of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulseJ. Acta Physica Sinica, 2017, 66(7): 078401. DOI: 10.7498/aps.66.078401

Citation:

Xi Xiao-Wen, Chai Chang-Chun, Liu Yang, Yang Yin-Tang, Fan Qing-Yang. Influence of the external condition on the damage process of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulseJ. Acta Physica Sinica, 2017, 66(7): 078401. DOI: 10.7498/aps.66.078401