Hao Min-Ru, Hu Hui-Yong, Liao Chen-Guang, Wang Bin, Zhao Xiao-Hong, Kang Hai-Yang, Su Han, Zhang He-Ming. Influence of -ray total dose radiation effect on the tunneling gate current of the uniaxial strained Si nanometer n-channel metal-oxide-semiconductor field-effect transistorJ. Acta Physica Sinica, 2017, 66(7): 076101. DOI: 10.7498/aps.66.076101
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Citation:
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Hao Min-Ru, Hu Hui-Yong, Liao Chen-Guang, Wang Bin, Zhao Xiao-Hong, Kang Hai-Yang, Su Han, Zhang He-Ming. Influence of -ray total dose radiation effect on the tunneling gate current of the uniaxial strained Si nanometer n-channel metal-oxide-semiconductor field-effect transistorJ. Acta Physica Sinica, 2017, 66(7): 076101. DOI: 10.7498/aps.66.076101
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Hao Min-Ru, Hu Hui-Yong, Liao Chen-Guang, Wang Bin, Zhao Xiao-Hong, Kang Hai-Yang, Su Han, Zhang He-Ming. Influence of -ray total dose radiation effect on the tunneling gate current of the uniaxial strained Si nanometer n-channel metal-oxide-semiconductor field-effect transistorJ. Acta Physica Sinica, 2017, 66(7): 076101. DOI: 10.7498/aps.66.076101
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Citation:
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Hao Min-Ru, Hu Hui-Yong, Liao Chen-Guang, Wang Bin, Zhao Xiao-Hong, Kang Hai-Yang, Su Han, Zhang He-Ming. Influence of -ray total dose radiation effect on the tunneling gate current of the uniaxial strained Si nanometer n-channel metal-oxide-semiconductor field-effect transistorJ. Acta Physica Sinica, 2017, 66(7): 076101. DOI: 10.7498/aps.66.076101
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