Determination of dislocation density of a class of n-GaN based on the variable temperature Hall-effect method

He Ju-Sheng; Zhang Meng; Pan Hua-Qing; Zou Ji-Jun; Qi Wei-Jing; Li Ping

doi:10.7498/aps.66.067201

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He Ju-Sheng, Zhang Meng, Pan Hua-Qing, Zou Ji-Jun, Qi Wei-Jing, Li Ping. Determination of dislocation density of a class of n-GaN based on the variable temperature Hall-effect methodJ. Acta Physica Sinica, 2017, 66(6): 067201. DOI: 10.7498/aps.66.067201

Citation:

He Ju-Sheng, Zhang Meng, Pan Hua-Qing, Zou Ji-Jun, Qi Wei-Jing, Li Ping. Determination of dislocation density of a class of n-GaN based on the variable temperature Hall-effect methodJ. Acta Physica Sinica, 2017, 66(6): 067201. DOI: 10.7498/aps.66.067201

Citation:

He Ju-Sheng, Zhang Meng, Pan Hua-Qing, Zou Ji-Jun, Qi Wei-Jing, Li Ping. Determination of dislocation density of a class of n-GaN based on the variable temperature Hall-effect methodJ. Acta Physica Sinica, 2017, 66(6): 067201. DOI: 10.7498/aps.66.067201