Changes of stress and luminescence properties in GaN-based LED films before and after transferring the films to a flexible layer on a submount from the silicon epitaxial substrate

Huang Bin-Bin; Xiong Chuan-Bing; Tang Ying-Wen; Zhang Chao-Yu; Huang Ji-Feng; Wang Guang-Xu; Liu Jun-Lin; Jiang Feng-Yi

doi:10.7498/aps.64.177804

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Huang Bin-Bin, Xiong Chuan-Bing, Tang Ying-Wen, Zhang Chao-Yu, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi. Changes of stress and luminescence properties in GaN-based LED films before and after transferring the films to a flexible layer on a submount from the silicon epitaxial substrateJ. Acta Physica Sinica, 2015, 64(17): 177804. DOI: 10.7498/aps.64.177804

Citation:

Huang Bin-Bin, Xiong Chuan-Bing, Tang Ying-Wen, Zhang Chao-Yu, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi. Changes of stress and luminescence properties in GaN-based LED films before and after transferring the films to a flexible layer on a submount from the silicon epitaxial substrateJ. Acta Physica Sinica, 2015, 64(17): 177804. DOI: 10.7498/aps.64.177804

Citation:

Huang Bin-Bin, Xiong Chuan-Bing, Tang Ying-Wen, Zhang Chao-Yu, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi. Changes of stress and luminescence properties in GaN-based LED films before and after transferring the films to a flexible layer on a submount from the silicon epitaxial substrateJ. Acta Physica Sinica, 2015, 64(17): 177804. DOI: 10.7498/aps.64.177804