Yang Wen-Xian, Ji Lian, Dai Pan, Tan Ming, Wu Yuan-Yuan, Lu Jian-Ya, Li Bao-Ji, Gu Jun, Lu Shu-Long, Ma Zhong-Quan. Study on photoluminescence properties of 1.05 eV InGaAsP layers grown by molecular beam epitaxyJ. Acta Physica Sinica, 2015, 64(17): 177802. DOI: 10.7498/aps.64.177802
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Citation:
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Yang Wen-Xian, Ji Lian, Dai Pan, Tan Ming, Wu Yuan-Yuan, Lu Jian-Ya, Li Bao-Ji, Gu Jun, Lu Shu-Long, Ma Zhong-Quan. Study on photoluminescence properties of 1.05 eV InGaAsP layers grown by molecular beam epitaxyJ. Acta Physica Sinica, 2015, 64(17): 177802. DOI: 10.7498/aps.64.177802
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Yang Wen-Xian, Ji Lian, Dai Pan, Tan Ming, Wu Yuan-Yuan, Lu Jian-Ya, Li Bao-Ji, Gu Jun, Lu Shu-Long, Ma Zhong-Quan. Study on photoluminescence properties of 1.05 eV InGaAsP layers grown by molecular beam epitaxyJ. Acta Physica Sinica, 2015, 64(17): 177802. DOI: 10.7498/aps.64.177802
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Citation:
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Yang Wen-Xian, Ji Lian, Dai Pan, Tan Ming, Wu Yuan-Yuan, Lu Jian-Ya, Li Bao-Ji, Gu Jun, Lu Shu-Long, Ma Zhong-Quan. Study on photoluminescence properties of 1.05 eV InGaAsP layers grown by molecular beam epitaxyJ. Acta Physica Sinica, 2015, 64(17): 177802. DOI: 10.7498/aps.64.177802
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