High mobility thin-film transistor with solution-processed hafnium-oxide dielectric and zinc-indium-tin-oxide semiconductor

Zhu Le-Yong; Gao Ya-Na; Zhang Jian-Hua; Li Xi-Feng

doi:10.7498/aps.64.168501

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Zhu Le-Yong, Gao Ya-Na, Zhang Jian-Hua, Li Xi-Feng. High mobility thin-film transistor with solution-processed hafnium-oxide dielectric and zinc-indium-tin-oxide semiconductorJ. Acta Physica Sinica, 2015, 64(16): 168501. DOI: 10.7498/aps.64.168501

Citation:

Zhu Le-Yong, Gao Ya-Na, Zhang Jian-Hua, Li Xi-Feng. High mobility thin-film transistor with solution-processed hafnium-oxide dielectric and zinc-indium-tin-oxide semiconductorJ. Acta Physica Sinica, 2015, 64(16): 168501. DOI: 10.7498/aps.64.168501

Citation:

Zhu Le-Yong, Gao Ya-Na, Zhang Jian-Hua, Li Xi-Feng. High mobility thin-film transistor with solution-processed hafnium-oxide dielectric and zinc-indium-tin-oxide semiconductorJ. Acta Physica Sinica, 2015, 64(16): 168501. DOI: 10.7498/aps.64.168501