Effect of interface nucleation time of the GaN nucleation layer on the crystal quality of GaN film

Guo Rui-Hua; Lu Tai-Ping; Jia Zhi-Gang; Shang Lin; Zhang Hua; Wang Rong; Zhai Guang-Mei; Xu Bing-She

doi:10.7498/aps.64.127305

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Guo Rui-Hua, Lu Tai-Ping, Jia Zhi-Gang, Shang Lin, Zhang Hua, Wang Rong, Zhai Guang-Mei, Xu Bing-She. Effect of interface nucleation time of the GaN nucleation layer on the crystal quality of GaN filmJ. Acta Physica Sinica, 2015, 64(12): 127305. DOI: 10.7498/aps.64.127305

Citation:

Guo Rui-Hua, Lu Tai-Ping, Jia Zhi-Gang, Shang Lin, Zhang Hua, Wang Rong, Zhai Guang-Mei, Xu Bing-She. Effect of interface nucleation time of the GaN nucleation layer on the crystal quality of GaN filmJ. Acta Physica Sinica, 2015, 64(12): 127305. DOI: 10.7498/aps.64.127305

Citation:

Guo Rui-Hua, Lu Tai-Ping, Jia Zhi-Gang, Shang Lin, Zhang Hua, Wang Rong, Zhai Guang-Mei, Xu Bing-She. Effect of interface nucleation time of the GaN nucleation layer on the crystal quality of GaN filmJ. Acta Physica Sinica, 2015, 64(12): 127305. DOI: 10.7498/aps.64.127305