Degradation induced by voltage and current for AlGaN/GaN high-electron mobility transistor under on-state stress

Shi Lei; Feng Shi-Wei; Shi Bang-Bing; Yan Xin; Zhang Ya-Min

doi:10.7498/aps.64.127303

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Shi Lei, Feng Shi-Wei, Shi Bang-Bing, Yan Xin, Zhang Ya-Min. Degradation induced by voltage and current for AlGaN/GaN high-electron mobility transistor under on-state stressJ. Acta Physica Sinica, 2015, 64(12): 127303. DOI: 10.7498/aps.64.127303

Citation:

Shi Lei, Feng Shi-Wei, Shi Bang-Bing, Yan Xin, Zhang Ya-Min. Degradation induced by voltage and current for AlGaN/GaN high-electron mobility transistor under on-state stressJ. Acta Physica Sinica, 2015, 64(12): 127303. DOI: 10.7498/aps.64.127303

Citation:

Shi Lei, Feng Shi-Wei, Shi Bang-Bing, Yan Xin, Zhang Ya-Min. Degradation induced by voltage and current for AlGaN/GaN high-electron mobility transistor under on-state stressJ. Acta Physica Sinica, 2015, 64(12): 127303. DOI: 10.7498/aps.64.127303