Mao Qing-Hua, Liu Jun-Lin, Quan Zhi-Jue, Wu Xiao-Ming, Zhang Meng, Jiang Feng-Yi. Influences of p-type layer structure and doping profile on the temperature dependence of the foward voltage characteristic of GaInN light-emitting diodeJ. Acta Physica Sinica, 2015, 64(10): 107801. DOI: 10.7498/aps.64.107801
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Citation:
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Mao Qing-Hua, Liu Jun-Lin, Quan Zhi-Jue, Wu Xiao-Ming, Zhang Meng, Jiang Feng-Yi. Influences of p-type layer structure and doping profile on the temperature dependence of the foward voltage characteristic of GaInN light-emitting diodeJ. Acta Physica Sinica, 2015, 64(10): 107801. DOI: 10.7498/aps.64.107801
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Mao Qing-Hua, Liu Jun-Lin, Quan Zhi-Jue, Wu Xiao-Ming, Zhang Meng, Jiang Feng-Yi. Influences of p-type layer structure and doping profile on the temperature dependence of the foward voltage characteristic of GaInN light-emitting diodeJ. Acta Physica Sinica, 2015, 64(10): 107801. DOI: 10.7498/aps.64.107801
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Citation:
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Mao Qing-Hua, Liu Jun-Lin, Quan Zhi-Jue, Wu Xiao-Ming, Zhang Meng, Jiang Feng-Yi. Influences of p-type layer structure and doping profile on the temperature dependence of the foward voltage characteristic of GaInN light-emitting diodeJ. Acta Physica Sinica, 2015, 64(10): 107801. DOI: 10.7498/aps.64.107801
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