First-principles study on the uniaxial pressure induced topological quantum phase transitions of Ge2X2Te5 (X =Sb, Bi) thin films

Zhang Mei; Wen Li-Wei; Ding Jun; Zhang Ying

doi:10.7498/aps.64.107301

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Zhang Mei, Wen Li-Wei, Ding Jun, Zhang Ying. First-principles study on the uniaxial pressure induced topological quantum phase transitions of Ge2X2Te5 (X =Sb, Bi) thin filmsJ. Acta Physica Sinica, 2015, 64(10): 107301. DOI: 10.7498/aps.64.107301

Citation:

Zhang Mei, Wen Li-Wei, Ding Jun, Zhang Ying. First-principles study on the uniaxial pressure induced topological quantum phase transitions of Ge2X2Te5 (X =Sb, Bi) thin filmsJ. Acta Physica Sinica, 2015, 64(10): 107301. DOI: 10.7498/aps.64.107301

Citation:

Zhang Mei, Wen Li-Wei, Ding Jun, Zhang Ying. First-principles study on the uniaxial pressure induced topological quantum phase transitions of Ge2X2Te5 (X =Sb, Bi) thin filmsJ. Acta Physica Sinica, 2015, 64(10): 107301. DOI: 10.7498/aps.64.107301