Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralaki silicon

Zhang Yue; Zhao Jian; Dong Peng; Tian Da-Xi; Liang Xing-Bo; Ma Xiang-Yang; Yang De-Ren

doi:10.7498/aps.64.096105

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Zhang Yue, Zhao Jian, Dong Peng, Tian Da-Xi, Liang Xing-Bo, Ma Xiang-Yang, Yang De-Ren. Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralaki siliconJ. Acta Physica Sinica, 2015, 64(9): 096105. DOI: 10.7498/aps.64.096105

Citation:

Zhang Yue, Zhao Jian, Dong Peng, Tian Da-Xi, Liang Xing-Bo, Ma Xiang-Yang, Yang De-Ren. Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralaki siliconJ. Acta Physica Sinica, 2015, 64(9): 096105. DOI: 10.7498/aps.64.096105

Citation:

Zhang Yue, Zhao Jian, Dong Peng, Tian Da-Xi, Liang Xing-Bo, Ma Xiang-Yang, Yang De-Ren. Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralaki siliconJ. Acta Physica Sinica, 2015, 64(9): 096105. DOI: 10.7498/aps.64.096105