Lü Yi, Zhang He-Ming, Hu Hui-Yong, Yang Jin-Yong, Yin Shu-Juan, Zhou Chun-Yu. A model of capacitance characteristic for uniaxially strained Si N-metal-oxide-semiconductor field-effect transistorJ. Acta Physica Sinica, 2015, 64(6): 067305. DOI: 10.7498/aps.64.067305
|
Citation:
|
Lü Yi, Zhang He-Ming, Hu Hui-Yong, Yang Jin-Yong, Yin Shu-Juan, Zhou Chun-Yu. A model of capacitance characteristic for uniaxially strained Si N-metal-oxide-semiconductor field-effect transistorJ. Acta Physica Sinica, 2015, 64(6): 067305. DOI: 10.7498/aps.64.067305
|
Lü Yi, Zhang He-Ming, Hu Hui-Yong, Yang Jin-Yong, Yin Shu-Juan, Zhou Chun-Yu. A model of capacitance characteristic for uniaxially strained Si N-metal-oxide-semiconductor field-effect transistorJ. Acta Physica Sinica, 2015, 64(6): 067305. DOI: 10.7498/aps.64.067305
|
Citation:
|
Lü Yi, Zhang He-Ming, Hu Hui-Yong, Yang Jin-Yong, Yin Shu-Juan, Zhou Chun-Yu. A model of capacitance characteristic for uniaxially strained Si N-metal-oxide-semiconductor field-effect transistorJ. Acta Physica Sinica, 2015, 64(6): 067305. DOI: 10.7498/aps.64.067305
|
DownLoad: