New folding lateral double-diffused metal-oxide-semiconductor field effect transistor with the step oxide layer

Duan Bao-Xing; Li Chun-Lai; Ma Jian-Chong; Yuan Song; Yang Yin-Tang

doi:10.7498/aps.64.067304

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Duan Bao-Xing, Li Chun-Lai, Ma Jian-Chong, Yuan Song, Yang Yin-Tang. New folding lateral double-diffused metal-oxide-semiconductor field effect transistor with the step oxide layerJ. Acta Physica Sinica, 2015, 64(6): 067304. DOI: 10.7498/aps.64.067304

Citation:

Duan Bao-Xing, Li Chun-Lai, Ma Jian-Chong, Yuan Song, Yang Yin-Tang. New folding lateral double-diffused metal-oxide-semiconductor field effect transistor with the step oxide layerJ. Acta Physica Sinica, 2015, 64(6): 067304. DOI: 10.7498/aps.64.067304

Citation:

Duan Bao-Xing, Li Chun-Lai, Ma Jian-Chong, Yuan Song, Yang Yin-Tang. New folding lateral double-diffused metal-oxide-semiconductor field effect transistor with the step oxide layerJ. Acta Physica Sinica, 2015, 64(6): 067304. DOI: 10.7498/aps.64.067304